Y. A. Bioud, A. Boucherif, A. Belarouci, E. Paradis, D. Drouin, and R. Arès, “Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs,” Nanoscale Res. Lett. 11(1), 446 (2016).
[Crossref]
[PubMed]
C. Edwards, A. Arbabi, G. Popescu, and L. L. Goddard, “Optically monitoring and controlling nanoscale topography during semiconductor etching,” Light Sci. Appl. 1(9), e30 (2012).
[Crossref]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
K. Gurnett and T. Adams, “Ultra-thin semiconductor wafer applications and processes,” III–Vs Review 19(4), 38–40 (2006).
[Crossref]
E. H. Yi, M. A. Parker, E. H. Yi, and M. A. Parker, “Fabricating vertical sidewalls in GaAs/AlGaAs heterostructure using light-induced wet etching,” J. Electrochem. Soc. 153(7), 496–501 (2006).
[Crossref]
X. Li and P. W. Bohn, “Arsenic oxide microcrystals in anodically processed GaAs electrochemical growth, spectroscopy, and morphology,” J. Electrochem. Soc. 147(5), 1740–1746 (2000).
[Crossref]
C. Youtsey, I. Adesida, and G. Bulman, “Highly anisotropic photoenhanced wet etching of n-type GaN,” Appl. Phys. Lett. 71(15), 2151–2153 (1997).
[Crossref]
D. Moutonnet, “Photochemical pattern on p-type GaAs,” Mater. Lett. 6(1–2), 34–36 (1987).
[Crossref]
D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood., “Waveguiding effects in laser‐induced aqueous etching of semiconductors,” Appl. Phys. Lett. 48(7), 496–498 (1986).
[Crossref]
D. Podlesnik, H. Gilgen, and R. Osgood., “Deep‐ultraviolet induced wet etching of GaAs,” Appl. Phys. Lett. 45(5), 563–565 (1984).
[Crossref]
M. Bafleur and A. Munoz-Yague, “Crystal, impurity-related and growth defects in molecular beam epitaxial GaAs layers,” Thin Solid Films 101(4), 299–310 (1983).
[Crossref]
F. W. Ostermayer, P. A. Kohl, and R. H. Burton, “Photo-chemical etching of integral lenses on InGaAsP/InP light-emitting diodes,” Appl. Phys. Lett. 43(7), 642–644 (1983).
[Crossref]
K. Gurnett and T. Adams, “Ultra-thin semiconductor wafer applications and processes,” III–Vs Review 19(4), 38–40 (2006).
[Crossref]
C. Youtsey, I. Adesida, and G. Bulman, “Highly anisotropic photoenhanced wet etching of n-type GaN,” Appl. Phys. Lett. 71(15), 2151–2153 (1997).
[Crossref]
C. Edwards, A. Arbabi, G. Popescu, and L. L. Goddard, “Optically monitoring and controlling nanoscale topography during semiconductor etching,” Light Sci. Appl. 1(9), e30 (2012).
[Crossref]
Y. A. Bioud, A. Boucherif, A. Belarouci, E. Paradis, D. Drouin, and R. Arès, “Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs,” Nanoscale Res. Lett. 11(1), 446 (2016).
[Crossref]
[PubMed]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
M. Bafleur and A. Munoz-Yague, “Crystal, impurity-related and growth defects in molecular beam epitaxial GaAs layers,” Thin Solid Films 101(4), 299–310 (1983).
[Crossref]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
Y. A. Bioud, A. Boucherif, A. Belarouci, E. Paradis, D. Drouin, and R. Arès, “Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs,” Nanoscale Res. Lett. 11(1), 446 (2016).
[Crossref]
[PubMed]
Y. A. Bioud, A. Boucherif, A. Belarouci, E. Paradis, D. Drouin, and R. Arès, “Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs,” Nanoscale Res. Lett. 11(1), 446 (2016).
[Crossref]
[PubMed]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
X. Li and P. W. Bohn, “Arsenic oxide microcrystals in anodically processed GaAs electrochemical growth, spectroscopy, and morphology,” J. Electrochem. Soc. 147(5), 1740–1746 (2000).
[Crossref]
Y. A. Bioud, A. Boucherif, A. Belarouci, E. Paradis, D. Drouin, and R. Arès, “Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs,” Nanoscale Res. Lett. 11(1), 446 (2016).
[Crossref]
[PubMed]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
C. Youtsey, I. Adesida, and G. Bulman, “Highly anisotropic photoenhanced wet etching of n-type GaN,” Appl. Phys. Lett. 71(15), 2151–2153 (1997).
[Crossref]
F. W. Ostermayer, P. A. Kohl, and R. H. Burton, “Photo-chemical etching of integral lenses on InGaAsP/InP light-emitting diodes,” Appl. Phys. Lett. 43(7), 642–644 (1983).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
Y. A. Bioud, A. Boucherif, A. Belarouci, E. Paradis, D. Drouin, and R. Arès, “Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs,” Nanoscale Res. Lett. 11(1), 446 (2016).
[Crossref]
[PubMed]
C. Edwards, K. Wang, R. Zhou, B. Bhaduri, G. Popescu, and L. L. Goddard, “Digital projection photochemical etching defines gray-scale features,” Opt. Express 21(11), 13547–13554 (2013).
[Crossref]
[PubMed]
C. Edwards, A. Arbabi, G. Popescu, and L. L. Goddard, “Optically monitoring and controlling nanoscale topography during semiconductor etching,” Light Sci. Appl. 1(9), e30 (2012).
[Crossref]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
D. Podlesnik, H. Gilgen, and R. Osgood., “Deep‐ultraviolet induced wet etching of GaAs,” Appl. Phys. Lett. 45(5), 563–565 (1984).
[Crossref]
D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood., “Waveguiding effects in laser‐induced aqueous etching of semiconductors,” Appl. Phys. Lett. 48(7), 496–498 (1986).
[Crossref]
C. Edwards, K. Wang, R. Zhou, B. Bhaduri, G. Popescu, and L. L. Goddard, “Digital projection photochemical etching defines gray-scale features,” Opt. Express 21(11), 13547–13554 (2013).
[Crossref]
[PubMed]
C. Edwards, A. Arbabi, G. Popescu, and L. L. Goddard, “Optically monitoring and controlling nanoscale topography during semiconductor etching,” Light Sci. Appl. 1(9), e30 (2012).
[Crossref]
K. Gurnett and T. Adams, “Ultra-thin semiconductor wafer applications and processes,” III–Vs Review 19(4), 38–40 (2006).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
F. W. Ostermayer, P. A. Kohl, and R. H. Burton, “Photo-chemical etching of integral lenses on InGaAsP/InP light-emitting diodes,” Appl. Phys. Lett. 43(7), 642–644 (1983).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
X. Li and P. W. Bohn, “Arsenic oxide microcrystals in anodically processed GaAs electrochemical growth, spectroscopy, and morphology,” J. Electrochem. Soc. 147(5), 1740–1746 (2000).
[Crossref]
D. Moutonnet, “Photochemical pattern on p-type GaAs,” Mater. Lett. 6(1–2), 34–36 (1987).
[Crossref]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
M. Bafleur and A. Munoz-Yague, “Crystal, impurity-related and growth defects in molecular beam epitaxial GaAs layers,” Thin Solid Films 101(4), 299–310 (1983).
[Crossref]
D. Podlesnik, H. Gilgen, and R. Osgood., “Deep‐ultraviolet induced wet etching of GaAs,” Appl. Phys. Lett. 45(5), 563–565 (1984).
[Crossref]
D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood., “Waveguiding effects in laser‐induced aqueous etching of semiconductors,” Appl. Phys. Lett. 48(7), 496–498 (1986).
[Crossref]
F. W. Ostermayer, P. A. Kohl, and R. H. Burton, “Photo-chemical etching of integral lenses on InGaAsP/InP light-emitting diodes,” Appl. Phys. Lett. 43(7), 642–644 (1983).
[Crossref]
Y. A. Bioud, A. Boucherif, A. Belarouci, E. Paradis, D. Drouin, and R. Arès, “Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs,” Nanoscale Res. Lett. 11(1), 446 (2016).
[Crossref]
[PubMed]
E. H. Yi, M. A. Parker, E. H. Yi, and M. A. Parker, “Fabricating vertical sidewalls in GaAs/AlGaAs heterostructure using light-induced wet etching,” J. Electrochem. Soc. 153(7), 496–501 (2006).
[Crossref]
E. H. Yi, M. A. Parker, E. H. Yi, and M. A. Parker, “Fabricating vertical sidewalls in GaAs/AlGaAs heterostructure using light-induced wet etching,” J. Electrochem. Soc. 153(7), 496–501 (2006).
[Crossref]
D. Podlesnik, H. Gilgen, and R. Osgood., “Deep‐ultraviolet induced wet etching of GaAs,” Appl. Phys. Lett. 45(5), 563–565 (1984).
[Crossref]
D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood., “Waveguiding effects in laser‐induced aqueous etching of semiconductors,” Appl. Phys. Lett. 48(7), 496–498 (1986).
[Crossref]
C. Edwards, K. Wang, R. Zhou, B. Bhaduri, G. Popescu, and L. L. Goddard, “Digital projection photochemical etching defines gray-scale features,” Opt. Express 21(11), 13547–13554 (2013).
[Crossref]
[PubMed]
C. Edwards, A. Arbabi, G. Popescu, and L. L. Goddard, “Optically monitoring and controlling nanoscale topography during semiconductor etching,” Light Sci. Appl. 1(9), e30 (2012).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
E. H. Yi, M. A. Parker, E. H. Yi, and M. A. Parker, “Fabricating vertical sidewalls in GaAs/AlGaAs heterostructure using light-induced wet etching,” J. Electrochem. Soc. 153(7), 496–501 (2006).
[Crossref]
E. H. Yi, M. A. Parker, E. H. Yi, and M. A. Parker, “Fabricating vertical sidewalls in GaAs/AlGaAs heterostructure using light-induced wet etching,” J. Electrochem. Soc. 153(7), 496–501 (2006).
[Crossref]
C. Youtsey, I. Adesida, and G. Bulman, “Highly anisotropic photoenhanced wet etching of n-type GaN,” Appl. Phys. Lett. 71(15), 2151–2153 (1997).
[Crossref]
F. W. Ostermayer, P. A. Kohl, and R. H. Burton, “Photo-chemical etching of integral lenses on InGaAsP/InP light-emitting diodes,” Appl. Phys. Lett. 43(7), 642–644 (1983).
[Crossref]
D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood., “Waveguiding effects in laser‐induced aqueous etching of semiconductors,” Appl. Phys. Lett. 48(7), 496–498 (1986).
[Crossref]
D. Podlesnik, H. Gilgen, and R. Osgood., “Deep‐ultraviolet induced wet etching of GaAs,” Appl. Phys. Lett. 45(5), 563–565 (1984).
[Crossref]
C. Youtsey, I. Adesida, and G. Bulman, “Highly anisotropic photoenhanced wet etching of n-type GaN,” Appl. Phys. Lett. 71(15), 2151–2153 (1997).
[Crossref]
N. J. Smeenk, J. Engel, P. Mulder, G. J. Bauhuis, G. M. M. W. Bissels, J. J. Schermer, E. Vlieg, and J. J. Kelly, “Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process,” ECS J. Solid State Sci. Technol. 2(3), 58–65 (2012).
[Crossref]
K. Gurnett and T. Adams, “Ultra-thin semiconductor wafer applications and processes,” III–Vs Review 19(4), 38–40 (2006).
[Crossref]
X. Li and P. W. Bohn, “Arsenic oxide microcrystals in anodically processed GaAs electrochemical growth, spectroscopy, and morphology,” J. Electrochem. Soc. 147(5), 1740–1746 (2000).
[Crossref]
E. H. Yi, M. A. Parker, E. H. Yi, and M. A. Parker, “Fabricating vertical sidewalls in GaAs/AlGaAs heterostructure using light-induced wet etching,” J. Electrochem. Soc. 153(7), 496–501 (2006).
[Crossref]
C. Edwards, A. Arbabi, G. Popescu, and L. L. Goddard, “Optically monitoring and controlling nanoscale topography during semiconductor etching,” Light Sci. Appl. 1(9), e30 (2012).
[Crossref]
D. Moutonnet, “Photochemical pattern on p-type GaAs,” Mater. Lett. 6(1–2), 34–36 (1987).
[Crossref]
G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, “III-V/Si photonics by die-to-wafer bonding,” Mater. Today 10(7–8), 36–43 (2007).
[Crossref]
Y. A. Bioud, A. Boucherif, A. Belarouci, E. Paradis, D. Drouin, and R. Arès, “Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs,” Nanoscale Res. Lett. 11(1), 446 (2016).
[Crossref]
[PubMed]
M. Bafleur and A. Munoz-Yague, “Crystal, impurity-related and growth defects in molecular beam epitaxial GaAs layers,” Thin Solid Films 101(4), 299–310 (1983).
[Crossref]
K. Wang, C. Edwards, S. Srivastava, and L. Goddard, “Fabrication of Gray-Scale Semiconductor Structures with Dynamic Digital Projection Photochemical Etching,” in CLEO: 2015, OSA Technical Digest (online) (Optical Society of America, 2015), paper STh3G.2.
[Crossref]
Arsenic oxide Material Safety Data Sheet https://www.spectrumchemical.com/MSDS/A5880.pdf .
J. L. Weyher and J. J. Kelly, “Defect-selective etching of semiconductors,” in Springer Handbook of Crystal Growth, G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley, eds. (Springer Berlin Heidelberg, 2010).
C. Edwards, K. Wang, B. Griffin, R. Zhou, B. Bhaduri, G. Popescu, and L. Goddard, “Fabrication of Diffractive Optical Elements with Digital Projection Photochemical Etching,” in CLEO: 2014, OSA Technical Digest (online) (Optical Society of America, 2014), paper SM1H.4.
[Crossref]
L. Edwards, K. Wang, C. Edwards, X. Yu, S. Srivastava, G. Liu, and L. Goddard, “Microfluidic Device Fabrication Utilizing Virtual Masks and Photochemical Etching,” in Frontiers in Optics 2015, OSA Technical Digest (online) (Optical Society of America, 2015), paper FM2B.3.
[Crossref]