Abstract

Ternary chalcogenides of a Ga–Sb–Se system are prospective materials for potential applications in the field of infrared optics. This Letter deals with the optical properties and photosensitivity of Ga–Sb–Se thin films deposited by co-sputtering, enabling us to fabricate amorphous thin films outside the glass-forming region. The optical bandgap range of 1.92–1.35 eV with corresponding refractive indices at 1.55 µm ranging from 2.47 to 3.33 can be reliably covered using ${{\rm Ga}_2}{{\rm Se}_3}$ and ${{\rm Sb}_2}{{\rm Se}_3}$ targets. Furthermore, the prolonged irradiation by the near-bandgap light under the pure argon atmosphere leads to the irreversible photo-bleaching effect in fabricated films. The magnitude of this effect decreases monotonically with an increasing antimony content.

© 2019 Optical Society of America

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