Abstract

We compare the Autler–Townes (AT)-splitting in ${{\rm Eu}^{3 + }}{:}{{\rm YPO}_4}$, ${{\rm Pr}^{3 + }}{:}{{\rm YPO}_4}$, and ${{\rm Pr}^{3 + }}{:}{{\rm Y}_2}{{\rm SiO}_5}$ crystals. The AT-splitting in ${{\rm Pr}^{3 + }}{:}{{\rm Y}_2}{{\rm SiO}_5}$ is stronger than other two-doped crystals, while the ${{\rm Pr}^{3 + }}$ ion has a stronger dressing than the ${{\rm Eu}^{3 + }}$ ion in a host material of YPO. The stronger dressing in YSO is attributed to the ${{\rm C}_{2h}}$ symmetry of the YSO crystal and its nondegeneracy, making the dressing sensitive to doped material. By investigating the relationship between spectral AT-splitting (SAT-splitting) and temporal AT-splitting (TAT-splitting), we observed that TAT-splitting depends upon the dressing effect and phonon-assisted nonradiative transition whereas SAT-splitting results only from the dressing effect. Based on our results, we proposed a model for an optical router and transistor (amplifier and switch). The router action results from the SAT- and TAT-splitting while the transistor was realized by a switch from bright to dark dressed states.

© 2019 Optical Society of America

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