Abstract

We demonstrate an all optically driven memory device based on vanadium dioxide (${{\rm VO}_2}$) for terahertz (THz) waves. By easily tuning the power of illuminating light, a ${{\rm VO}_2}$ memory device is coded in reconfigurable and multi-level states, taking advantage of its hysteretic metal-to-insulator phase transition (MIT). Further, writing with intense femtosecond pulses, the memory effects are performed by non-thermal photo-induced MIT, and resultant 2-bit coding with a write time of 22 µs is demonstrated, yielding a dramatically improved write rate compared to existing thermally controlled ${{\rm VO}_2}$ memory device. The proposed all optically driven ${{\rm VO}_2}$-based memory device paves the way for actively manipulating THz waves within robust reconfigurable high-speed memory functionality.

© 2019 Optical Society of America

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