Abstract

By using an Open-Aperture Z-scan technique with both femtosecond and nanosecond laser pulses at 1064nm, the nonlinear optical properties of GaAs and Bi-doped GaAs, including the saturable absorption property and reverse saturable absorption property are systematically measured and analyzed directly in detail. Compared to pure GaAs, Bi-doped GaAs has a lower saturation intensity, wider saturable absorption energy region, lower two-photon absorption coefficient, better saturable absorption response and stronger optical limiting response. The results suggest that the incorporation of Bismuth in GaAs is an effective way of improving the nonlinear optical properties of GaAs, which provide crucial experimental evidence for that the characteristics of the passively Q-switched laser with Bi-doped GaAs saturable absorber is better than pure GaAs.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
  3. J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode pumped Nd:YAG with a GaAs output coupler,” Opt. Commun. 165(4–6), 245–249 (1999).
    [Crossref]
  4. C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
    [Crossref]
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    [Crossref]
  6. D. Li, M. Yang, Y. Cai, S. Zhao, and Y. Feng, “First principles study of the ternary complex model of EL2 defect in GaAs saturable absorber,” Opt. Express 20(6), 6258–6266 (2012).
    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  10. G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]

2017 (1)

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

2015 (2)

Z. Cheng, S. Xiao, J. He, and B. Gu, “Ultrafast optical nonlinearities in GaAs at telecommunication wavelengths,” Chinese J. Luminesc. 36(8), 969–975 (2015).

S. Wang, Y. Zhang, K. Wu, R. Zhang, H. Yu, H. Zhang, G. Zhang, and Q. Xiong, “Third-order nonlinearity and passive Q-switching of Cr4+:YGG garnet crystal,” Opt. Lett. 40(10), 2421–2424 (2015).
[Crossref] [PubMed]

2014 (3)

2012 (4)

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

D. Li, M. Yang, Y. Cai, S. Zhao, and Y. Feng, “First principles study of the ternary complex model of EL2 defect in GaAs saturable absorber,” Opt. Express 20(6), 6258–6266 (2012).
[Crossref] [PubMed]

D. C. Li, M. Yang, S. Z. Zhao, Y. Q. Cai, Y. H. Lu, Z. Q. Bai, and Y. P. Feng, “First-principles study of the effect of BiGa heteroantisites in GaAs:Bi alloy,” Comput. Mater. Sci. 63, 178–181 (2012).
[Crossref]

D. Li, M. Yang, S. Zhao, Y. Cai, and Y. Feng, “First principles study of bismuth alloying effects in GaAs saturable absorber,” Opt. Express 20(10), 11574–11580 (2012).
[Crossref] [PubMed]

2011 (1)

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

2010 (1)

Z. Chine, H. Fitouri, I. Zaied, A. Rebey, and B. El Jani, “Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy,” Semicond. Sci. Technol. 25(6), 065009 (2010).
[Crossref]

2009 (1)

J. Wang, Y. Hernandez, M. Lotya, J. N. Coleman, and W. J. Blau, “Broadband nonlinear optical response of graphene dispersions,” Adv. Mater. 21(23), 2430–2435 (2009).
[Crossref]

2008 (3)

A. Belabbes, A. Zaoui, and M. Ferhat, “Lattice dynamics study of bismuth III–V compounds,” J. Phys. Condens. Matter 20(41), 415221 (2008).
[Crossref]

D. Madouri, A. Boukra, A. Zaoui, and M. Ferhat, “Bismuth alloying in GaAs: a first-principles study,” Comput. Mater. Sci. 43(4), 818–822 (2008).
[Crossref]

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

2007 (2)

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, and A. Krotkus, “Valence band anticrossing in Ga BixAs1− x,” Appl. Phys. Lett. 91(5), 051909 (2007).
[Crossref]

G. Li, S. Zhao, K. Yang, and D. Li, “Laser-diode-pumped passively Q-switched Nd:YVO4 green laser with periodically poled KTP and GaAs saturable absorber,” J. Mod. Opt. 54(1), 107–117 (2007).
[Crossref]

2006 (1)

J. Liu, L. Gao, Y. Wang, W. Tian, J. He, and X. Ma, “Q-switched and mode-locked diode-pumped Nd: YAG laser with an LT-GaAs,” Optik (Stuttg.) 117(4), 163–166 (2006).
[Crossref]

2001 (2)

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

R. Häring, R. Paschotta, R. Fluck, E. Gini, H. Melchior, and U. Keller, “Passively Q-switched microchip laser at 1.5μm,” J. Opt. Soc. Am. B 18(12), 1805–1811 (2001).
[Crossref]

2000 (1)

F. Smektala, C. Quemard, V. Couderc, and A. Barthélémy, “Non-linear optical properties of chalcogenide glasses measured by Z-scan,” J. Non-Cryst. Solids 274(1–3), 232–237 (2000).
[Crossref]

1999 (1)

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode pumped Nd:YAG with a GaAs output coupler,” Opt. Commun. 165(4–6), 245–249 (1999).
[Crossref]

1996 (1)

1988 (1)

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 mm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Alberi, K.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, and A. Krotkus, “Valence band anticrossing in Ga BixAs1− x,” Appl. Phys. Lett. 91(5), 051909 (2007).
[Crossref]

Bai, Z. Q.

D. C. Li, M. Yang, S. Z. Zhao, Y. Q. Cai, Y. H. Lu, Z. Q. Bai, and Y. P. Feng, “First-principles study of the effect of BiGa heteroantisites in GaAs:Bi alloy,” Comput. Mater. Sci. 63, 178–181 (2012).
[Crossref]

Barthélémy, A.

F. Smektala, C. Quemard, V. Couderc, and A. Barthélémy, “Non-linear optical properties of chalcogenide glasses measured by Z-scan,” J. Non-Cryst. Solids 274(1–3), 232–237 (2000).
[Crossref]

Bastiman, F.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Belabbes, A.

A. Belabbes, A. Zaoui, and M. Ferhat, “Lattice dynamics study of bismuth III–V compounds,” J. Phys. Condens. Matter 20(41), 415221 (2008).
[Crossref]

Bertulis, K.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, and A. Krotkus, “Valence band anticrossing in Ga BixAs1− x,” Appl. Phys. Lett. 91(5), 051909 (2007).
[Crossref]

Blau, W. J.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

J. Wang, Y. Hernandez, M. Lotya, J. N. Coleman, and W. J. Blau, “Broadband nonlinear optical response of graphene dispersions,” Adv. Mater. 21(23), 2430–2435 (2009).
[Crossref]

Blokland, J. H.

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

Boggess, T. F.

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 mm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Bohnert, K.

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 mm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Boukra, A.

D. Madouri, A. Boukra, A. Zaoui, and M. Ferhat, “Bismuth alloying in GaAs: a first-principles study,” Comput. Mater. Sci. 43(4), 818–822 (2008).
[Crossref]

Cai, Y.

Cai, Y. Q.

D. C. Li, M. Yang, S. Z. Zhao, Y. Q. Cai, Y. H. Lu, Z. Q. Bai, and Y. P. Feng, “First-principles study of the effect of BiGa heteroantisites in GaAs:Bi alloy,” Comput. Mater. Sci. 63, 178–181 (2012).
[Crossref]

Capizzi, M.

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

Cheng, K.

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

Cheng, Z.

Z. Cheng, S. Xiao, J. He, and B. Gu, “Ultrafast optical nonlinearities in GaAs at telecommunication wavelengths,” Chinese J. Luminesc. 36(8), 969–975 (2015).

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Chine, Z.

Z. Chine, H. Fitouri, I. Zaied, A. Rebey, and B. El Jani, “Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy,” Semicond. Sci. Technol. 25(6), 065009 (2010).
[Crossref]

Christianen, P. C. M.

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

Coleman, J. N.

J. Wang, Y. Hernandez, M. Lotya, J. N. Coleman, and W. J. Blau, “Broadband nonlinear optical response of graphene dispersions,” Adv. Mater. 21(23), 2430–2435 (2009).
[Crossref]

Cong, W.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

Couderc, V.

F. Smektala, C. Quemard, V. Couderc, and A. Barthélémy, “Non-linear optical properties of chalcogenide glasses measured by Z-scan,” J. Non-Cryst. Solids 274(1–3), 232–237 (2000).
[Crossref]

Cui, Y.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

David, J. P. R.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Dong, N.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

Du, J.

Dubon, O. D.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, and A. Krotkus, “Valence band anticrossing in Ga BixAs1− x,” Appl. Phys. Lett. 91(5), 051909 (2007).
[Crossref]

El Jani, B.

Z. Chine, H. Fitouri, I. Zaied, A. Rebey, and B. El Jani, “Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy,” Semicond. Sci. Technol. 25(6), 065009 (2010).
[Crossref]

Feng, Y.

Feng, Y. P.

D. C. Li, M. Yang, S. Z. Zhao, Y. Q. Cai, Y. H. Lu, Z. Q. Bai, and Y. P. Feng, “First-principles study of the effect of BiGa heteroantisites in GaAs:Bi alloy,” Comput. Mater. Sci. 63, 178–181 (2012).
[Crossref]

Ferhat, M.

D. Madouri, A. Boukra, A. Zaoui, and M. Ferhat, “Bismuth alloying in GaAs: a first-principles study,” Comput. Mater. Sci. 43(4), 818–822 (2008).
[Crossref]

A. Belabbes, A. Zaoui, and M. Ferhat, “Lattice dynamics study of bismuth III–V compounds,” J. Phys. Condens. Matter 20(41), 415221 (2008).
[Crossref]

Fitouri, H.

Z. Chine, H. Fitouri, I. Zaied, A. Rebey, and B. El Jani, “Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy,” Semicond. Sci. Technol. 25(6), 065009 (2010).
[Crossref]

Fluck, R.

Gaeta, A. L.

Gao, L.

J. Liu, L. Gao, Y. Wang, W. Tian, J. He, and X. Ma, “Q-switched and mode-locked diode-pumped Nd: YAG laser with an LT-GaAs,” Optik (Stuttg.) 117(4), 163–166 (2006).
[Crossref]

Gini, E.

Gu, .

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Gu, B.

Z. Cheng, S. Xiao, J. He, and B. Gu, “Ultrafast optical nonlinearities in GaAs at telecommunication wavelengths,” Chinese J. Luminesc. 36(8), 969–975 (2015).

Gu, J.

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode pumped Nd:YAG with a GaAs output coupler,” Opt. Commun. 165(4–6), 245–249 (1999).
[Crossref]

Han, C.

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

Häring, R.

He, J.

Z. Cheng, S. Xiao, J. He, and B. Gu, “Ultrafast optical nonlinearities in GaAs at telecommunication wavelengths,” Chinese J. Luminesc. 36(8), 969–975 (2015).

J. Liu, L. Gao, Y. Wang, W. Tian, J. He, and X. Ma, “Q-switched and mode-locked diode-pumped Nd: YAG laser with an LT-GaAs,” Optik (Stuttg.) 117(4), 163–166 (2006).
[Crossref]

Hernandez, Y.

J. Wang, Y. Hernandez, M. Lotya, J. N. Coleman, and W. J. Blau, “Broadband nonlinear optical response of graphene dispersions,” Adv. Mater. 21(23), 2430–2435 (2009).
[Crossref]

Huang, J.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

Hunter, C. J.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Kajava, T. T.

Keller, U.

Krotkus, A.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, and A. Krotkus, “Valence band anticrossing in Ga BixAs1− x,” Appl. Phys. Lett. 91(5), 051909 (2007).
[Crossref]

Lam, Y. L.

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode pumped Nd:YAG with a GaAs output coupler,” Opt. Commun. 165(4–6), 245–249 (1999).
[Crossref]

Li, D.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

D. Li, M. Yang, S. Zhao, Y. Cai, and Y. Feng, “First principles study of bismuth alloying effects in GaAs saturable absorber,” Opt. Express 20(10), 11574–11580 (2012).
[Crossref] [PubMed]

D. Li, M. Yang, Y. Cai, S. Zhao, and Y. Feng, “First principles study of the ternary complex model of EL2 defect in GaAs saturable absorber,” Opt. Express 20(6), 6258–6266 (2012).
[Crossref] [PubMed]

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

G. Li, S. Zhao, K. Yang, and D. Li, “Laser-diode-pumped passively Q-switched Nd:YVO4 green laser with periodically poled KTP and GaAs saturable absorber,” J. Mod. Opt. 54(1), 107–117 (2007).
[Crossref]

Li, D. C.

D. C. Li, M. Yang, S. Z. Zhao, Y. Q. Cai, Y. H. Lu, Z. Q. Bai, and Y. P. Feng, “First-principles study of the effect of BiGa heteroantisites in GaAs:Bi alloy,” Comput. Mater. Sci. 63, 178–181 (2012).
[Crossref]

Li, G.

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

G. Li, S. Zhao, K. Yang, and D. Li, “Laser-diode-pumped passively Q-switched Nd:YVO4 green laser with periodically poled KTP and GaAs saturable absorber,” J. Mod. Opt. 54(1), 107–117 (2007).
[Crossref]

Li, X.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

Li, Y.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

Lim, T. K.

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Liu, J.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

J. Liu, L. Gao, Y. Wang, W. Tian, J. He, and X. Ma, “Q-switched and mode-locked diode-pumped Nd: YAG laser with an LT-GaAs,” Optik (Stuttg.) 117(4), 163–166 (2006).
[Crossref]

Loh, K. P.

Lotya, M.

J. Wang, Y. Hernandez, M. Lotya, J. N. Coleman, and W. J. Blau, “Broadband nonlinear optical response of graphene dispersions,” Adv. Mater. 21(23), 2430–2435 (2009).
[Crossref]

Lu, S. B.

Lu, Y. H.

D. C. Li, M. Yang, S. Z. Zhao, Y. Q. Cai, Y. H. Lu, Z. Q. Bai, and Y. P. Feng, “First-principles study of the effect of BiGa heteroantisites in GaAs:Bi alloy,” Comput. Mater. Sci. 63, 178–181 (2012).
[Crossref]

Ma, X.

J. Liu, L. Gao, Y. Wang, W. Tian, J. He, and X. Ma, “Q-switched and mode-locked diode-pumped Nd: YAG laser with an LT-GaAs,” Optik (Stuttg.) 117(4), 163–166 (2006).
[Crossref]

Maan, J. C.

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

Madouri, D.

D. Madouri, A. Boukra, A. Zaoui, and M. Ferhat, “Bismuth alloying in GaAs: a first-principles study,” Comput. Mater. Sci. 43(4), 818–822 (2008).
[Crossref]

Melchior, H.

Mohmad, A. R.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Ng, J. S.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Paschotta, R.

Pettinari, G.

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

Polimeni, A.

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

Qiao, H.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

Quemard, C.

F. Smektala, C. Quemard, V. Couderc, and A. Barthélémy, “Non-linear optical properties of chalcogenide glasses measured by Z-scan,” J. Non-Cryst. Solids 274(1–3), 232–237 (2000).
[Crossref]

Rebey, A.

Z. Chine, H. Fitouri, I. Zaied, A. Rebey, and B. El Jani, “Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy,” Semicond. Sci. Technol. 25(6), 065009 (2010).
[Crossref]

Richards, R.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Selkirk, A.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

Smektala, F.

F. Smektala, C. Quemard, V. Couderc, and A. Barthélémy, “Non-linear optical properties of chalcogenide glasses measured by Z-scan,” J. Non-Cryst. Solids 274(1–3), 232–237 (2000).
[Crossref]

Smirl, A. L.

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 mm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Sweeney, S. J.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Tam, S. C.

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode pumped Nd:YAG with a GaAs output coupler,” Opt. Commun. 165(4–6), 245–249 (1999).
[Crossref]

Tam, S.-C.

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Tang, D. Y.

Tian, W.

J. Liu, L. Gao, Y. Wang, W. Tian, J. He, and X. Ma, “Q-switched and mode-locked diode-pumped Nd: YAG laser with an LT-GaAs,” Optik (Stuttg.) 117(4), 163–166 (2006).
[Crossref]

Tiedje, T.

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

Valley, G. C.

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 mm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Walukiewicz, W.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, and A. Krotkus, “Valence band anticrossing in Ga BixAs1− x,” Appl. Phys. Lett. 91(5), 051909 (2007).
[Crossref]

Wan, K. T.

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Wang, J.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

J. Wang, Y. Hernandez, M. Lotya, J. N. Coleman, and W. J. Blau, “Broadband nonlinear optical response of graphene dispersions,” Adv. Mater. 21(23), 2430–2435 (2009).
[Crossref]

Wang, S.

Wang, Y.

J. Liu, L. Gao, Y. Wang, W. Tian, J. He, and X. Ma, “Q-switched and mode-locked diode-pumped Nd: YAG laser with an LT-GaAs,” Optik (Stuttg.) 117(4), 163–166 (2006).
[Crossref]

Wen, S. C.

Wu, K.

Xiao, S.

Z. Cheng, S. Xiao, J. He, and B. Gu, “Ultrafast optical nonlinearities in GaAs at telecommunication wavelengths,” Chinese J. Luminesc. 36(8), 969–975 (2015).

Xie, W.

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode pumped Nd:YAG with a GaAs output coupler,” Opt. Commun. 165(4–6), 245–249 (1999).
[Crossref]

Xie, Y.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

Xiong, Q.

Xu, D.

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Yang, K.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

G. Li, S. Zhao, K. Yang, and D. Li, “Laser-diode-pumped passively Q-switched Nd:YVO4 green laser with periodically poled KTP and GaAs saturable absorber,” J. Mod. Opt. 54(1), 107–117 (2007).
[Crossref]

Yang, M.

Young, E. C.

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

Yu, H.

Yu, K. M.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, and A. Krotkus, “Valence band anticrossing in Ga BixAs1− x,” Appl. Phys. Lett. 91(5), 051909 (2007).
[Crossref]

Zaied, I.

Z. Chine, H. Fitouri, I. Zaied, A. Rebey, and B. El Jani, “Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy,” Semicond. Sci. Technol. 25(6), 065009 (2010).
[Crossref]

Zaoui, A.

A. Belabbes, A. Zaoui, and M. Ferhat, “Lattice dynamics study of bismuth III–V compounds,” J. Phys. Condens. Matter 20(41), 415221 (2008).
[Crossref]

D. Madouri, A. Boukra, A. Zaoui, and M. Ferhat, “Bismuth alloying in GaAs: a first-principles study,” Comput. Mater. Sci. 43(4), 818–822 (2008).
[Crossref]

Zhang, G.

S. Wang, Y. Zhang, K. Wu, R. Zhang, H. Yu, H. Zhang, G. Zhang, and Q. Xiong, “Third-order nonlinearity and passive Q-switching of Cr4+:YGG garnet crystal,” Opt. Lett. 40(10), 2421–2424 (2015).
[Crossref] [PubMed]

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

Zhang, H.

Zhang, L.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

Zhang, R.

Zhang, S.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

Zhang, X.

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

Zhang, Y.

Zhao, B.

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

Zhao, S.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

D. Li, M. Yang, S. Zhao, Y. Cai, and Y. Feng, “First principles study of bismuth alloying effects in GaAs saturable absorber,” Opt. Express 20(10), 11574–11580 (2012).
[Crossref] [PubMed]

D. Li, M. Yang, Y. Cai, S. Zhao, and Y. Feng, “First principles study of the ternary complex model of EL2 defect in GaAs saturable absorber,” Opt. Express 20(6), 6258–6266 (2012).
[Crossref] [PubMed]

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

G. Li, S. Zhao, K. Yang, and D. Li, “Laser-diode-pumped passively Q-switched Nd:YVO4 green laser with periodically poled KTP and GaAs saturable absorber,” J. Mod. Opt. 54(1), 107–117 (2007).
[Crossref]

Zhao, S. Z.

D. C. Li, M. Yang, S. Z. Zhao, Y. Q. Cai, Y. H. Lu, Z. Q. Bai, and Y. P. Feng, “First-principles study of the effect of BiGa heteroantisites in GaAs:Bi alloy,” Comput. Mater. Sci. 63, 178–181 (2012).
[Crossref]

Zheng, J.

Zhou, F.

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode pumped Nd:YAG with a GaAs output coupler,” Opt. Commun. 165(4–6), 245–249 (1999).
[Crossref]

Adv. Mater. (1)

J. Wang, Y. Hernandez, M. Lotya, J. N. Coleman, and W. J. Blau, “Broadband nonlinear optical response of graphene dispersions,” Adv. Mater. 21(23), 2430–2435 (2009).
[Crossref]

Appl. Phys. Lett. (3)

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, and A. Krotkus, “Valence band anticrossing in Ga BixAs1− x,” Appl. Phys. Lett. 91(5), 051909 (2007).
[Crossref]

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje, “Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− x Bix,” Appl. Phys. Lett. 92(26), 262105 (2008).
[Crossref]

Chemistry (1)

X. Zhang, A. Selkirk, S. Zhang, J. Huang, Y. Li, Y. Xie, N. Dong, Y. Cui, L. Zhang, W. J. Blau, and J. Wang, “MoS2/Carbon Nanotube Core-Shell Nanocomposites for Enhanced Nonlinear Optical Performance,” Chemistry 23(14), 3321–3327 (2017).
[Crossref] [PubMed]

Chinese J. Luminesc. (1)

Z. Cheng, S. Xiao, J. He, and B. Gu, “Ultrafast optical nonlinearities in GaAs at telecommunication wavelengths,” Chinese J. Luminesc. 36(8), 969–975 (2015).

Comput. Mater. Sci. (2)

D. Madouri, A. Boukra, A. Zaoui, and M. Ferhat, “Bismuth alloying in GaAs: a first-principles study,” Comput. Mater. Sci. 43(4), 818–822 (2008).
[Crossref]

D. C. Li, M. Yang, S. Z. Zhao, Y. Q. Cai, Y. H. Lu, Z. Q. Bai, and Y. P. Feng, “First-principles study of the effect of BiGa heteroantisites in GaAs:Bi alloy,” Comput. Mater. Sci. 63, 178–181 (2012).
[Crossref]

IEEE J. Quantum Electron. (1)

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 mm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

J. Mod. Opt. (1)

G. Li, S. Zhao, K. Yang, and D. Li, “Laser-diode-pumped passively Q-switched Nd:YVO4 green laser with periodically poled KTP and GaAs saturable absorber,” J. Mod. Opt. 54(1), 107–117 (2007).
[Crossref]

J. Non-Cryst. Solids (1)

F. Smektala, C. Quemard, V. Couderc, and A. Barthélémy, “Non-linear optical properties of chalcogenide glasses measured by Z-scan,” J. Non-Cryst. Solids 274(1–3), 232–237 (2000).
[Crossref]

J. Opt. Soc. Am. B (1)

J. Phys. Condens. Matter (1)

A. Belabbes, A. Zaoui, and M. Ferhat, “Lattice dynamics study of bismuth III–V compounds,” J. Phys. Condens. Matter 20(41), 415221 (2008).
[Crossref]

Laser Phys. (1)

C. Han, S. Zhao, G. Li, D. Li, K. Yang, G. Zhang, K. Cheng, and B. Zhao, “Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturable absorber,” Laser Phys. 21(10), 1769–1774 (2011).
[Crossref]

Opt. Commun. (2)

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode pumped Nd:YAG with a GaAs output coupler,” Opt. Commun. 165(4–6), 245–249 (1999).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

Opt. Express (4)

Opt. Lasers Eng. (1)

. Gu, F. Zhou, K. T. Wan, T. K. Lim, S.-C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Opt. Lett. (2)

Optik (Stuttg.) (1)

J. Liu, L. Gao, Y. Wang, W. Tian, J. He, and X. Ma, “Q-switched and mode-locked diode-pumped Nd: YAG laser with an LT-GaAs,” Optik (Stuttg.) 117(4), 163–166 (2006).
[Crossref]

Semicond. Sci. Technol. (1)

Z. Chine, H. Fitouri, I. Zaied, A. Rebey, and B. El Jani, “Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy,” Semicond. Sci. Technol. 25(6), 065009 (2010).
[Crossref]

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Figures (6)

Fig. 1
Fig. 1 Characterisation of Bi:GaAs and GaAs. (a) The calculated ion ranges of Bismuth alloying in GaAs (b) The profiles of transmission spectrum for Bi:GaAs and GaAs, Scanning electron microscopy image of (c) GaAs and (d) Bi:GaAs.
Fig. 2
Fig. 2 Schematic of the experimental setup.
Fig. 3
Fig. 3 Typical open-aperture Z-scan data of (a) GaAs and (b) Bi:GaAs with normalized transmission plotted as a function of sample position z under under ns laser pulses at 1064 nm.
Fig. 4
Fig. 4 Normalized transmission as functions of input laser fluence for pure GaAs and Bi:GaAs for ns pluses.
Fig. 5
Fig. 5 Typical open-aperture Z-scan data of (a) GaAs and (b) Bi:GaAs with normalized transmission plotted as a function of sample position z under femtosecond laser pulses.
Fig. 6
Fig. 6 Normalized transmission as functions of input laser fluence for pure GaAs and Bi:GaAs for fs pulses.

Tables (1)

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Table 1 Parameters of the theoretical calculation of the two samples at 1064um

Equations (4)

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T=(1 α 0 L 1+I/ I S βIL)/( 1 α 0 L )
I Z = I 0 1+ z 2 / z 0 2
T=[ 1 α 0 L I S I S + I 0 /(1+ z 2 / z 0 2 ) βL I 0 /(1+ z 2 / z 0 2 ) ]/(1 α 0 L)
T= m=0 [ q 0 (z,0)] (m+1) 1.5 mN q 0 (z,0)= β eff L eff I 0 (1+ z 2 / z 0 2 )

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