Abstract

In this work, combined analysis of internal strain effects on optical polarization and internal quantum efficiency (IQE) were conducted for the first time. Deep ultraviolet light extraction efficiency of AlGaN multiple quantum wells (MQWs) have been investigated by means of polarization-dependent photoluminescence (PD-PL) and temperature-dependent photoluminescence (TD-PL). With the increase of compressive internal strain applied to the MQWs by an underlying n-AlGaN layer, the degree of polarization (DOP) of the sample was improved from −0.26 to −0.06 leading to significant enhancement of light extraction efficiency (LEE) as the PL intensity increased by 29.2% even though the internal quantum efficiency declined by 7.7%. The results indicated that proper management of the internal compressive strain in AlGaN MQWs can facilitate the transverse electric (TE) mode and suppress the transverse magnetic (TM) mode which could effectively reduce the total internal reflection (TIR) and absorption. This work threw light upon the promising application of compressively strained MQWs to reduce the wave-guide effect and improve the LEE of deep ultraviolet light emitting diodes (DUV LEDs).

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  20. M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
    [Crossref]
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    [Crossref]
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    [Crossref]

2017 (1)

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

2016 (3)

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Optik -physica status solidi (a) 206(6), 1176–1182 (2016).

W. Wang, H. Lu, L. Fu, C. He, M. Wang, N. Tang, F. Xu, T. Yu, W. Ge, and B. Shen, “Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure,” Opt. Express 24(16), 18176–18183 (2016).
[Crossref] [PubMed]

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

2015 (1)

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

2014 (2)

2013 (1)

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

2012 (2)

H. Lu, T. Yu, G. Yuan, C. Jia, G. Chen, and G. Zhang, “Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells,” Opt. Express 20(25), 27384–27392 (2012).
[Crossref] [PubMed]

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

2011 (4)

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[Crossref]

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

2010 (1)

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

2009 (3)

M. A. Moram and M. E. Vickers, “X-ray diffraction of III-nitrides,” Rep. Prog. Phys. 72(3), 036502 (2009).
[Crossref]

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Nat. Photonics 2(2), 77–84 (2009).

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

2008 (1)

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

2004 (1)

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” physica status solidi (a) 213(12), 3078-3102 (2004).

2003 (1)

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[Crossref]

2002 (1)

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

Ajia, I. A.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Ambacher, O.

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

Balakrishnan, K.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

Bernardini, F.

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

Bi, W.

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Optik -physica status solidi (a) 206(6), 1176–1182 (2016).

Cai, J.

Chen, C.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Chen, G.

Chen, J.

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Choi, H.-S.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Choi, I.-G.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Chua, C.

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Chua, C. L.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Dai, J.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Demir, H. V.

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Optik -physica status solidi (a) 206(6), 1176–1182 (2016).

Edwards, G.

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

Einfeldt, S.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Fan, S.

Feneberg, M.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

Feng, Z. C.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Fiorentini, V.

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

Fu, D.

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

Fu, L.

Fujikawa, S.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Nat. Photonics 2(2), 77–84 (2009).

Gaska, R.

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

Ge, W.

Goldhahn, R.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

Guttmann, M.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

He, C.

Hirayama, H.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Nat. Photonics 2(2), 77–84 (2009).

Hou, M.

Jia, C.

Jiang, H. X.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” physica status solidi (a) 213(12), 3078-3102 (2004).

Johnson, N. M.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Kamata, N.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Nat. Photonics 2(2), 77–84 (2009).

Katona, T.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

Kennedy, R.

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

Khan, A.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

Knauer, A.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Kneissl, M.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Kolbe, T.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Kueller, V.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

Kuhn, C.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

Lapeyrade, M.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

Li, J.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” physica status solidi (a) 213(12), 3078-3102 (2004).

Li, X.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Lin, J. Y.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” physica status solidi (a) 213(12), 3078-3102 (2004).

Liu, B.

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

Liu, K.

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

Lobo, N.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

Long, H.

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Lu, H.

Mehnke, F.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

Meyer, J. R.

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[Crossref]

Moram, M. A.

M. A. Moram and M. E. Vickers, “X-ray diffraction of III-nitrides,” Rep. Prog. Phys. 72(3), 036502 (2009).
[Crossref]

Nakarmi, M. L.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” physica status solidi (a) 213(12), 3078-3102 (2004).

Nam, K. B.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” physica status solidi (a) 213(12), 3078-3102 (2004).

Naveh, D.

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[Crossref]

Noguchi, N.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Nat. Photonics 2(2), 77–84 (2009).

Norimatsu, J.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Nat. Photonics 2(2), 77–84 (2009).

Northrup, J. E.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Qin, Z.

Rass, J.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

Reich, C.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

Rodriguez, H.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

Roqan, I. S.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Ryu, H.-Y.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Sharma, T. K.

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[Crossref]

Shatalov, M.

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

Shen, B.

Shim, J.-I.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Shur, M.

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

Stellmach, J.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

Sun, H.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Sun, W.

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

Sun, X. W.

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Optik -physica status solidi (a) 206(6), 1176–1182 (2016).

Takano, T.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Nat. Photonics 2(2), 77–84 (2009).

Tamulaitis, G.

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

Tang, N.

Towe, E.

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[Crossref]

Tsubaki, K.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Nat. Photonics 2(2), 77–84 (2009).

Vickers, M. E.

M. A. Moram and M. E. Vickers, “X-ray diffraction of III-nitrides,” Rep. Prog. Phys. 72(3), 036502 (2009).
[Crossref]

Vogt, P.

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Vurgaftman, I.

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[Crossref]

Wang, B. G.

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

Wang, M.

Wang, S.

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Wang, W.

Wang, X.

Wernicke, T.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

Weyers, M.

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Wu, F.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Wunderer, T.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

Xie, Z. L.

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

Xiu, X. Q.

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

Xu, F.

Xu, J.

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Yang, J.

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

Yang, Z.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Yu, T.

Yuan, G.

Zhang, D.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Zhang, G.

Zhang, J.

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Zhang, R.

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

Zhang, Y.

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Optik -physica status solidi (a) 206(6), 1176–1182 (2016).

Zhang, Z.-H.

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Optik -physica status solidi (a) 206(6), 1176–1182 (2016).

Zhao, C.

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

Zheng, Y. D.

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

Appl. Phys. Express (1)

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Appl. Phys. Lett. (5)

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

J. Appl. Phys. (2)

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[Crossref]

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, and G. Tamulaitis, “Efficiency of light emission in high aluminum content AlGaN quantum wells,” J. Appl. Phys. 105(7), 073103 (2009).
[Crossref]

J. Phys. D Appl. Phys. (2)

H. Long, F. Wu, J. Zhang, S. Wang, J. Chen, C. Zhao, Z. C. Feng, J. Xu, X. Li, J. Dai, and C. Chen, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates,” J. Phys. D Appl. Phys. 49(41), 415103 (2016).
[Crossref]

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Nat. Photonics (2)

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Nat. Photonics 2(2), 77–84 (2009).

Opt. Express (4)

Optik -physica status solidi (a) (1)

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Optik -physica status solidi (a) 206(6), 1176–1182 (2016).

Phys. Rev. B (1)

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[Crossref]

physica status solidi (a) (1)

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” physica status solidi (a) 213(12), 3078-3102 (2004).

Rep. Prog. Phys. (1)

M. A. Moram and M. E. Vickers, “X-ray diffraction of III-nitrides,” Rep. Prog. Phys. 72(3), 036502 (2009).
[Crossref]

Semicond. Sci. Technol. (1)

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[Crossref]

Thin Solid Films (1)

D. Fu, R. Zhang, B. G. Wang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, and G. Edwards, “Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x<y) with various Al-content combinations,” Thin Solid Films 519(22), 8013–8017 (2011).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 HR-XRD 2θ-ω scan for all the samples. At least 3 satellite peaks can be resolved and the peak of MQWs slightly left shifted.
Fig. 2
Fig. 2 RSM of all the sample indicated pseudomorphical growth of MQWs on the n-AlGaN layer so that they shared the same in-plane lattice a.
Fig. 3
Fig. 3 (a)-(c) TD-PL spectra plot against photon energy for sample A to sample C at temperature range from 15 K to 300 K.
Fig. 4
Fig. 4 (a) Normalized integral intentisy of PD-PL plotted as a function of rotation angle range from 0 to 90. The inset showed the schematic propagation of TE and TM mode. (b) Normalized PD-PL intensity fitted with sine function showed in polar coordinates. (c) Plot of DOP as a function of in-plane strain.
Fig. 5
Fig. 5 PL intensity probed from the surface of each sample. The inset showed the IQE as well as the normalized PL and light extraction coefficient η of the samples for comparison.

Tables (1)

Tables Icon

Table 1 Summary of the parameters for the samples.

Equations (3)

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DOP= I Ec - I E//c I Ec + I E//c
ε xx = a MQWs a 0MQWs a 0MQWs
η=c I PL IQE

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