Abstract

By incorporating a 965 nm laser diode, the bidirectional current triggering of up to 30 mA was demonstrated in a two-terminal planar device based on serially connected vanadium dioxide (VO2) thin films grown by pulsed laser deposition. The bidirectional current triggering was realized by using the focused beams of laser pulses through the photo-thermally induced phase transition of VO2. The transient responses of laser-triggered currents were also investigated when laser pulses excited the device at a variety of pulse widths and repetition rates of up to 4.0 Hz. A switching contrast between off- and on-state currents was obtained as ~8333, and rising and falling times were measured as ~39 and ~29 ms, respectively, for 50 ms laser pulses.

© 2016 Optical Society of America

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References

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  1. K. Shenai and A. Chattopadhyay, “Optimization of high-voltage wide bandgap semiconductor power diodes,” IEEE Trans. Electron Dev. 62(2), 359–365 (2015).
    [Crossref]
  2. I. C. Kizilyalli, A. P. Edwards, O. Aktas, T. Prunty, and D. Bour, “Vertical power p-n diodes based on bulk GaN,” IEEE Trans. Electron Dev. 62(2), 414–422 (2015).
    [Crossref]
  3. Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
    [Crossref]
  4. F. J. Morin, “Oxides which show a metal-to-insulator transition at the neel temperature,” Phys. Rev. Lett. 3(1), 34–36 (1959).
    [Crossref]
  5. E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
    [Crossref] [PubMed]
  6. A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
    [Crossref] [PubMed]
  7. S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
    [Crossref]
  8. M. Rini, A. Cavalleri, R. W. Schoenlein, R. López, L. C. Feldman, R. F. Haglund, L. A. Boatner, and T. E. Haynes, “Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance,” Opt. Lett. 30(5), 558–560 (2005).
    [Crossref] [PubMed]
  9. G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
    [Crossref]
  10. B. K. Ridley and T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. Lond. 78(2), 293–304 (1961).
    [Crossref]
  11. H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
    [Crossref]
  12. Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
    [Crossref]
  13. S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
    [Crossref]
  14. Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
    [Crossref]
  15. H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
    [Crossref]
  16. G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, and H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
    [Crossref]
  17. B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
    [Crossref]
  18. T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
    [Crossref]
  19. S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan, and J. P. Treadway, “Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices,” J. Appl. Phys. 113(18), 184501 (2013).
    [Crossref]
  20. Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
    [Crossref] [PubMed]
  21. Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
    [Crossref] [PubMed]
  22. Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).
  23. B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional laser triggering of planar device based on vanadium dioxide thin film,” Opt. Express 22(8), 9016–9023 (2014).
    [Crossref] [PubMed]
  24. J. Kim, S. Jo, K. Park, H.-J. Song, H.-T. Kim, B.-J. Kim, and Y. W. Lee, “20 mA bidirectional laser triggering in planar devices based on vanadium dioxide thin films using CO2 laser,” Opt. Express 23(11), 14234–14244 (2015).
    [Crossref] [PubMed]
  25. J. Kim, B.-J. Kim, B.-A. Yu, H. W. Kang, S. Y. Nam, J. Oh, and Y. W. Lee, “Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode,” J. Korean Phys. Soc. 68(2), 323–328 (2016).
    [Crossref]

2016 (1)

J. Kim, B.-J. Kim, B.-A. Yu, H. W. Kang, S. Y. Nam, J. Oh, and Y. W. Lee, “Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode,” J. Korean Phys. Soc. 68(2), 323–328 (2016).
[Crossref]

2015 (3)

J. Kim, S. Jo, K. Park, H.-J. Song, H.-T. Kim, B.-J. Kim, and Y. W. Lee, “20 mA bidirectional laser triggering in planar devices based on vanadium dioxide thin films using CO2 laser,” Opt. Express 23(11), 14234–14244 (2015).
[Crossref] [PubMed]

K. Shenai and A. Chattopadhyay, “Optimization of high-voltage wide bandgap semiconductor power diodes,” IEEE Trans. Electron Dev. 62(2), 359–365 (2015).
[Crossref]

I. C. Kizilyalli, A. P. Edwards, O. Aktas, T. Prunty, and D. Bour, “Vertical power p-n diodes based on bulk GaN,” IEEE Trans. Electron Dev. 62(2), 414–422 (2015).
[Crossref]

2014 (2)

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional laser triggering of planar device based on vanadium dioxide thin film,” Opt. Express 22(8), 9016–9023 (2014).
[Crossref] [PubMed]

2013 (2)

S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan, and J. P. Treadway, “Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices,” J. Appl. Phys. 113(18), 184501 (2013).
[Crossref]

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

2011 (2)

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, and H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[Crossref]

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

2010 (4)

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).

2009 (2)

2008 (1)

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

2007 (2)

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

2005 (1)

2004 (1)

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[Crossref]

2001 (1)

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

2000 (1)

G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
[Crossref]

1961 (1)

B. K. Ridley and T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. Lond. 78(2), 293–304 (1961).
[Crossref]

1959 (1)

F. J. Morin, “Oxides which show a metal-to-insulator transition at the neel temperature,” Phys. Rev. Lett. 3(1), 34–36 (1959).
[Crossref]

Aktas, O.

I. C. Kizilyalli, A. P. Edwards, O. Aktas, T. Prunty, and D. Bour, “Vertical power p-n diodes based on bulk GaN,” IEEE Trans. Electron Dev. 62(2), 414–422 (2015).
[Crossref]

Arcangeletti, E.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Baldassarre, L.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Basov, D. N.

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

Boatner, L. A.

Bour, D.

I. C. Kizilyalli, A. P. Edwards, O. Aktas, T. Prunty, and D. Bour, “Vertical power p-n diodes based on bulk GaN,” IEEE Trans. Electron Dev. 62(2), 414–422 (2015).
[Crossref]

Capasso, F.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Cavalleri, A.

M. Rini, A. Cavalleri, R. W. Schoenlein, R. López, L. C. Feldman, R. F. Haglund, L. A. Boatner, and T. E. Haynes, “Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance,” Opt. Lett. 30(5), 558–560 (2005).
[Crossref] [PubMed]

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Chae, B.-G.

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[Crossref]

Chattopadhyay, A.

K. Shenai and A. Chattopadhyay, “Optimization of high-voltage wide bandgap semiconductor power diodes,” IEEE Trans. Electron Dev. 62(2), 359–365 (2015).
[Crossref]

Chen, X.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

Choi, S.

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, and H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[Crossref]

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

Chun, C. H.

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

Cui, Y.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Di Castro, D.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Driscoll, T.

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

Edwards, A. P.

I. C. Kizilyalli, A. P. Edwards, O. Aktas, T. Prunty, and D. Bour, “Vertical power p-n diodes based on bulk GaN,” IEEE Trans. Electron Dev. 62(2), 414–422 (2015).
[Crossref]

Feldman, L. C.

Fisher, C. J.

S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan, and J. P. Treadway, “Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices,” J. Appl. Phys. 113(18), 184501 (2013).
[Crossref]

Forget, P.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Ha, S. D.

S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan, and J. P. Treadway, “Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices,” J. Appl. Phys. 113(18), 184501 (2013).
[Crossref]

Haglund, R. F.

Han, C. S.

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

Han, S.

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

Haynes, T. E.

Jo, S.

Kang, H. W.

J. Kim, B.-J. Kim, B.-A. Yu, H. W. Kang, S. Y. Nam, J. Oh, and Y. W. Lee, “Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode,” J. Korean Phys. Soc. 68(2), 323–328 (2016).
[Crossref]

Kang, K.-Y.

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[Crossref]

Kats, M. A.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Kieffer, J. C.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Kim, B.-J.

J. Kim, B.-J. Kim, B.-A. Yu, H. W. Kang, S. Y. Nam, J. Oh, and Y. W. Lee, “Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode,” J. Korean Phys. Soc. 68(2), 323–328 (2016).
[Crossref]

J. Kim, S. Jo, K. Park, H.-J. Song, H.-T. Kim, B.-J. Kim, and Y. W. Lee, “20 mA bidirectional laser triggering in planar devices based on vanadium dioxide thin films using CO2 laser,” Opt. Express 23(11), 14234–14244 (2015).
[Crossref] [PubMed]

B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional laser triggering of planar device based on vanadium dioxide thin film,” Opt. Express 22(8), 9016–9023 (2014).
[Crossref] [PubMed]

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, and H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[Crossref]

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

Kim, G.

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[Crossref]

Kim, H.-T.

J. Kim, S. Jo, K. Park, H.-J. Song, H.-T. Kim, B.-J. Kim, and Y. W. Lee, “20 mA bidirectional laser triggering in planar devices based on vanadium dioxide thin films using CO2 laser,” Opt. Express 23(11), 14234–14244 (2015).
[Crossref] [PubMed]

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, and H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[Crossref]

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[Crossref]

Kim, J.

J. Kim, B.-J. Kim, B.-A. Yu, H. W. Kang, S. Y. Nam, J. Oh, and Y. W. Lee, “Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode,” J. Korean Phys. Soc. 68(2), 323–328 (2016).
[Crossref]

J. Kim, S. Jo, K. Park, H.-J. Song, H.-T. Kim, B.-J. Kim, and Y. W. Lee, “20 mA bidirectional laser triggering in planar devices based on vanadium dioxide thin films using CO2 laser,” Opt. Express 23(11), 14234–14244 (2015).
[Crossref] [PubMed]

Kizilyalli, I. C.

I. C. Kizilyalli, A. P. Edwards, O. Aktas, T. Prunty, and D. Bour, “Vertical power p-n diodes based on bulk GaN,” IEEE Trans. Electron Dev. 62(2), 414–422 (2015).
[Crossref]

Klein, S.

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

Ko, C.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

Lee, Y. W.

J. Kim, B.-J. Kim, B.-A. Yu, H. W. Kang, S. Y. Nam, J. Oh, and Y. W. Lee, “Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode,” J. Korean Phys. Soc. 68(2), 323–328 (2016).
[Crossref]

J. Kim, S. Jo, K. Park, H.-J. Song, H.-T. Kim, B.-J. Kim, and Y. W. Lee, “20 mA bidirectional laser triggering in planar devices based on vanadium dioxide thin films using CO2 laser,” Opt. Express 23(11), 14234–14244 (2015).
[Crossref] [PubMed]

B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional laser triggering of planar device based on vanadium dioxide thin film,” Opt. Express 22(8), 9016–9023 (2014).
[Crossref] [PubMed]

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, and H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[Crossref]

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).

Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, and H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[Crossref] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[Crossref] [PubMed]

Lim, J.-W.

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Lim, Y.-S.

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[Crossref]

López, R.

Lupi, S.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Maeng, S.-L.

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[Crossref]

Malavasi, L.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Marini, C.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Morin, F. J.

F. J. Morin, “Oxides which show a metal-to-insulator transition at the neel temperature,” Phys. Rev. Lett. 3(1), 34–36 (1959).
[Crossref]

Mouli, C.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

Nam, S. Y.

J. Kim, B.-J. Kim, B.-A. Yu, H. W. Kang, S. Y. Nam, J. Oh, and Y. W. Lee, “Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode,” J. Korean Phys. Soc. 68(2), 323–328 (2016).
[Crossref]

Oh, J.

J. Kim, B.-J. Kim, B.-A. Yu, H. W. Kang, S. Y. Nam, J. Oh, and Y. W. Lee, “Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode,” J. Korean Phys. Soc. 68(2), 323–328 (2016).
[Crossref]

Park, K.

Park, S. M.

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

Pergament, A.

G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
[Crossref]

Pershin, Y. V.

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

Perucchi, A.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Postorino, P.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[Crossref] [PubMed]

Prunty, T.

I. C. Kizilyalli, A. P. Edwards, O. Aktas, T. Prunty, and D. Bour, “Vertical power p-n diodes based on bulk GaN,” IEEE Trans. Electron Dev. 62(2), 414–422 (2015).
[Crossref]

Qazilbash, M. M.

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

Quinn, J.

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

Ráksi, F.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Ramanathan, S.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan, and J. P. Treadway, “Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices,” J. Appl. Phys. 113(18), 184501 (2013).
[Crossref]

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

Ridley, B. K.

B. K. Ridley and T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. Lond. 78(2), 293–304 (1961).
[Crossref]

Rini, M.

Schoenlein, R. W.

Seo, G.

B.-J. Kim, G. Seo, and Y. W. Lee, “Bidirectional laser triggering of planar device based on vanadium dioxide thin film,” Opt. Express 22(8), 9016–9023 (2014).
[Crossref] [PubMed]

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, and H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[Crossref]

Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).

Shenai, K.

K. Shenai and A. Chattopadhyay, “Optimization of high-voltage wide bandgap semiconductor power diodes,” IEEE Trans. Electron Dev. 62(2), 359–365 (2015).
[Crossref]

Shin, J.-H.

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, and H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[Crossref]

Siders, C. W.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Song, H.-J.

Squier, J. A.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Stefanovich, D.

G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
[Crossref]

Stefanovich, G.

G. Stefanovich, A. Pergament, and D. Stefanovich, “Electrical switching and Mott transition in VO2,” J. Phys. Condens. Matter 12(41), 8837–8845 (2000).
[Crossref]

Tóth, C.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[Crossref] [PubMed]

Treadway, J. P.

S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan, and J. P. Treadway, “Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices,” J. Appl. Phys. 113(18), 184501 (2013).
[Crossref]

Ventra, M. D.

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

Watkins, T. B.

B. K. Ridley and T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. Lond. 78(2), 293–304 (1961).
[Crossref]

Yang, Z.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

Yao, Y.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Youn, D.-H.

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[Crossref]

Yu, B.-A.

J. Kim, B.-J. Kim, B.-A. Yu, H. W. Kang, S. Y. Nam, J. Oh, and Y. W. Lee, “Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode,” J. Korean Phys. Soc. 68(2), 323–328 (2016).
[Crossref]

Yun, S. J.

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

Zhang, S.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Zhou, Y.

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan, and J. P. Treadway, “Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices,” J. Appl. Phys. 113(18), 184501 (2013).
[Crossref]

Annu. Rev. Mater. Res. (1)

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

Appl. Phys. Lett. (3)

S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan, and F. Capasso, “Current-modulated optical properties of vanadium dioxide thin films in the phase transition region,” Appl. Phys. Lett. 105(21), 211104 (2014).
[Crossref]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[Crossref]

T. Driscoll, J. Quinn, S. Klein, H.-T. Kim, B.-J. Kim, Y. V. Pershin, M. D. Ventra, and D. N. Basov, “Memristive adaptive filters,” Appl. Phys. Lett. 97(9), 093502 (2010).
[Crossref]

Electron. Mater. Lett. (1)

S. Han, C. H. Chun, C. S. Han, and S. M. Park, “Coupled physics analyses of VOx-based, three-level microbolometer,” Electron. Mater. Lett. 5(2), 63–65 (2009).
[Crossref]

IEEE Electron Device Lett. (2)

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, and S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron Device Lett. 34(2), 220–222 (2013).
[Crossref]

B.-J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, “VO2 thin-film varistor based on metal-insulator transition,” IEEE Electron Device Lett. 31(1), 14–16 (2010).
[Crossref]

IEEE Trans. Electron Dev. (2)

K. Shenai and A. Chattopadhyay, “Optimization of high-voltage wide bandgap semiconductor power diodes,” IEEE Trans. Electron Dev. 62(2), 359–365 (2015).
[Crossref]

I. C. Kizilyalli, A. P. Edwards, O. Aktas, T. Prunty, and D. Bour, “Vertical power p-n diodes based on bulk GaN,” IEEE Trans. Electron Dev. 62(2), 414–422 (2015).
[Crossref]

J. Appl. Phys. (2)

S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan, and J. P. Treadway, “Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices,” J. Appl. Phys. 113(18), 184501 (2013).
[Crossref]

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, and D. N. Basov, “Electrical oscillations induced by the metal-insulator transition in VO2,” J. Appl. Phys. 107(2), 023702 (2010).
[Crossref]

J. Korean Phys. Soc. (2)

Y. W. Lee, B.-J. Kim, S. Choi, B.-G. Chae, H.-T. Kim, G. Seo, and Y. W. Lee, “Repetition-rate-selectable high-speed optical gating in a VO2 thin film based on gain modulation of optical amplifier,” J. Korean Phys. Soc. 57(6), 1755–1759 (2010).

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[Crossref]

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[Crossref]

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Figures (4)

Fig. 1
Fig. 1 Schematic diagram of experimental setup for realizing bidirectional current triggering in two-terminal planar device based on serially connected VO2 thin films with 965 nm LD. Insets (a) and (b) show the plane-view schematic diagram of a unit device and the equivalent circuit diagram of the fabricated VO2 device, respectively. The inset (c) shows the plane-view optical microscope image of the fabricated device (L = 25 μm and W = 50 μm).
Fig. 2
Fig. 2 I-V property of fabricated VO2 device, measured in V-mode with LD switched on (red circles) or off (blue squares). Black dashed lines indicate the LD-controlled reversible current triggering operation, measured in voltage sweep mode of VS increasing from 0 to 10.0 V, with the LD randomly switched on or off ten times per each state. The inset shows the I-V characteristic of the device, measured in I-mode without laser illumination.
Fig. 3
Fig. 3 Transient responses of laser-triggered device, measured for various on-state pulse widths such as (a) 30, (b) 40, (c) 50, and (d) 100 ms at a repetition rate of 1.0 Hz.
Fig. 4
Fig. 4 Transient responses of laser-triggered device, measured for various repetition rates such as (a) 0.1, (b) 0.5, (c) 1.0, (d) 2.0, (e) 3.0, and (f) 4.0 Hz with on-state pulse width and beam focuser output power fixed as 50 ms and ~4.75 W, respectively.

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