Abstract

The direct modulation characteristics of a membrane distributed feedback (DFB) laser on a silicon substrate were investigated. Enhancement of the optical confinement factor in the membrane structure facilitates the fabrication of a strongly index-coupled (κi = 1500 cm−1) DFB laser with the cavity length of 80 µm and a threshold current of 270 µA. Small-signal modulation measurements yielded a −3dB bandwidth of 9.5 GHz at 1.03-mA bias current, with modulation efficiency of 9.9 GHz/mA1/2, which is, to the best of our knowledge, the highest value among those reported for DFB lasers.

© 2015 Optical Society of America

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    [Crossref]
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    [Crossref]

2015 (6)

U. D. Dave, B. Kuyken, F. Leo, S.-P. Gorza, S. Combrie, A. De Rossi, F. Raineri, and G. Roelkens, “Nonlinear properties of dispersion engineered InGaP photonic wire waveguides in the telecommunication wavelength range,” Opt. Express 23(4), 4650–4657 (2015).
[Crossref] [PubMed]

A. Higuera-Rodriguez, V. Dolores-Calzadilla, Y. Jiao, E. J. Geluk, D. Heiss, and M. K. Smit, “Realization of efficient metal grating couplers for membrane-based integrated photonics,” Opt. Lett. 40(12), 2755–2757 (2015).
[Crossref] [PubMed]

D. Inoue, J. Lee, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate,” Opt. Express 23(6), 7771–7778 (2015).
[Crossref] [PubMed]

D. Inoue, T. Hiratani, Y. Atsuji, T. Tomiyasu, T. Amemiya, N. Nishiyama, and S. Arai, “Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1502907 (2015).
[Crossref]

S. Matsuo, T. Fujii, K. Hasebe, K. Takeda, T. Sato, and T. Kakitsuka, “Directly modulated DFB laser on SiO2/Si substrate for datacenter networks,” Lightwave Technol. 33(6), 1217–1222 (2015).
[Crossref]

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

2014 (1)

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

2013 (2)

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

2012 (3)

2011 (3)

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

2009 (2)

2008 (1)

2007 (2)

J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express 15(11), 6744–6749 (2007).
[Crossref] [PubMed]

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

2005 (1)

K. Ohira, T. Murayama, S. Tamura, and S. Arai, “Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1162–1168 (2005).
[Crossref]

2003 (1)

T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003).
[Crossref]

2001 (1)

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura, and S. Arai, “Continuous wave operation of optically pumped membrane DFB laser,” Electron. Lett. 37(24), 1455–1457 (2001).
[Crossref]

1994 (1)

K. Oe, Y. Noguchi, and C. Caneau, “GaInAsP lateral current injection lasers on semi-insulating substrates,” IEEE Photonics Technol. Lett. 6(4), 479–481 (1994).
[Crossref]

1986 (1)

R. S. Tucker, J. M. Wiesenfeld, P. M. Downey, and J. E. Bowers, “Propagation delays and transition times in pulse-modulated semiconductor lasers,” Appl. Phys. Lett. 48(25), 1707–1709 (1986).
[Crossref]

Amemiya, T.

D. Inoue, J. Lee, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate,” Opt. Express 23(6), 7771–7778 (2015).
[Crossref] [PubMed]

D. Inoue, T. Hiratani, Y. Atsuji, T. Tomiyasu, T. Amemiya, N. Nishiyama, and S. Arai, “Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1502907 (2015).
[Crossref]

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

Arai, S.

D. Inoue, T. Hiratani, Y. Atsuji, T. Tomiyasu, T. Amemiya, N. Nishiyama, and S. Arai, “Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1502907 (2015).
[Crossref]

D. Inoue, J. Lee, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate,” Opt. Express 23(6), 7771–7778 (2015).
[Crossref] [PubMed]

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

T. Okumura, M. Kurokawa, M. Shirao, D. Kondo, H. Ito, N. Nishiyama, T. Maruyama, and S. Arai, “Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits,” Opt. Express 17(15), 12564–12570 (2009).
[Crossref] [PubMed]

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

K. Ohira, T. Murayama, S. Tamura, and S. Arai, “Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1162–1168 (2005).
[Crossref]

T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003).
[Crossref]

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura, and S. Arai, “Continuous wave operation of optically pumped membrane DFB laser,” Electron. Lett. 37(24), 1455–1457 (2001).
[Crossref]

Atsuji, Y.

D. Inoue, T. Hiratani, Y. Atsuji, T. Tomiyasu, T. Amemiya, N. Nishiyama, and S. Arai, “Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1502907 (2015).
[Crossref]

D. Inoue, J. Lee, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate,” Opt. Express 23(6), 7771–7778 (2015).
[Crossref] [PubMed]

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

Baets, R.

Bimberg, D.

P. Moser, J. A. Lott, P. Wolf, G. Larisch, H. Li, N. N. Ledentsov, and D. Bimberg, “56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s,” Electron. Lett. 48(20), 1292–1294 (2012).
[Crossref]

Bowers, J. E.

R. S. Tucker, J. M. Wiesenfeld, P. M. Downey, and J. E. Bowers, “Propagation delays and transition times in pulse-modulated semiconductor lasers,” Appl. Phys. Lett. 48(25), 1707–1709 (1986).
[Crossref]

Caneau, C.

K. Oe, Y. Noguchi, and C. Caneau, “GaInAsP lateral current injection lasers on semi-insulating substrates,” IEEE Photonics Technol. Lett. 6(4), 479–481 (1994).
[Crossref]

Capmany, J.

Chang, C. C.

Chen, C. T.

Combrie, S.

Dave, U. D.

De Rossi, A.

Di Cioccio, L.

Doi, K.

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

Dolores-Calzadilla, V.

Downey, P. M.

R. S. Tucker, J. M. Wiesenfeld, P. M. Downey, and J. E. Bowers, “Propagation delays and transition times in pulse-modulated semiconductor lasers,” Appl. Phys. Lett. 48(25), 1707–1709 (1986).
[Crossref]

Ellis, B.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Fedeli, J.-M.

Fédéli, J. M.

Fédéli, J.-M.

Fujii, T.

S. Matsuo, T. Fujii, K. Hasebe, K. Takeda, T. Sato, and T. Kakitsuka, “Directly modulated DFB laser on SiO2/Si substrate for datacenter networks,” Lightwave Technol. 33(6), 1217–1222 (2015).
[Crossref]

Fujisawa, T.

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

Geluk, E. J.

Gorza, S.-P.

Haller, E. E.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Harris, J.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Hasebe, K.

S. Matsuo, T. Fujii, K. Hasebe, K. Takeda, T. Sato, and T. Kakitsuka, “Directly modulated DFB laser on SiO2/Si substrate for datacenter networks,” Lightwave Technol. 33(6), 1217–1222 (2015).
[Crossref]

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Heiss, D.

Higuera-Rodriguez, A.

Hiraiwa, K.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Hiratani, T.

D. Inoue, J. Lee, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate,” Opt. Express 23(6), 7771–7778 (2015).
[Crossref] [PubMed]

D. Inoue, T. Hiratani, Y. Atsuji, T. Tomiyasu, T. Amemiya, N. Nishiyama, and S. Arai, “Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1502907 (2015).
[Crossref]

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

Hsiao, H. L.

Iga, R.

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

Imai, S.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Inoue, D.

D. Inoue, T. Hiratani, Y. Atsuji, T. Tomiyasu, T. Amemiya, N. Nishiyama, and S. Arai, “Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1502907 (2015).
[Crossref]

D. Inoue, J. Lee, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate,” Opt. Express 23(6), 7771–7778 (2015).
[Crossref] [PubMed]

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

Ishii, H.

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

Ishikawa, T.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Ito, H.

Ito, T.

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

Iwai, N.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Jiao, Y.

Kakitsuka, T.

S. Matsuo, T. Fujii, K. Hasebe, K. Takeda, T. Sato, and T. Kakitsuka, “Directly modulated DFB laser on SiO2/Si substrate for datacenter networks,” Lightwave Technol. 33(6), 1217–1222 (2015).
[Crossref]

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Kamiya, S.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Kanazawa, S.

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

Kasukawa, A.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Kawakita, Y.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Kobayashi, W.

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Kohtoku, M.

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

Kondo, D.

Kumar, R.

Kurokawa, M.

Kurosaki, T.

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

Kuyken, B.

Lagahe, C.

Lan, H. C.

Larisch, G.

P. Moser, J. A. Lott, P. Wolf, G. Larisch, H. Li, N. N. Ledentsov, and D. Bimberg, “56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s,” Electron. Lett. 48(20), 1292–1294 (2012).
[Crossref]

Ledentsov, N. N.

P. Moser, J. A. Lott, P. Wolf, G. Larisch, H. Li, N. N. Ledentsov, and D. Bimberg, “56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s,” Electron. Lett. 48(20), 1292–1294 (2012).
[Crossref]

Lee, J.

D. Inoue, J. Lee, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate,” Opt. Express 23(6), 7771–7778 (2015).
[Crossref] [PubMed]

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

Lee, Y. C.

Leo, F.

Li, H.

P. Moser, J. A. Lott, P. Wolf, G. Larisch, H. Li, N. N. Ledentsov, and D. Bimberg, “56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s,” Electron. Lett. 48(20), 1292–1294 (2012).
[Crossref]

Liu, L.

Lloret, J.

Lott, J. A.

P. Moser, J. A. Lott, P. Wolf, G. Larisch, H. Li, N. N. Ledentsov, and D. Bimberg, “56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s,” Electron. Lett. 48(20), 1292–1294 (2012).
[Crossref]

Maruyama, T.

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

T. Okumura, M. Kurokawa, M. Shirao, D. Kondo, H. Ito, N. Nishiyama, T. Maruyama, and S. Arai, “Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits,” Opt. Express 17(15), 12564–12570 (2009).
[Crossref] [PubMed]

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

Matsuo, S.

S. Matsuo, T. Fujii, K. Hasebe, K. Takeda, T. Sato, and T. Kakitsuka, “Directly modulated DFB laser on SiO2/Si substrate for datacenter networks,” Lightwave Technol. 33(6), 1217–1222 (2015).
[Crossref]

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Mayer, M. A.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Mechet, P.

Miller, D. A. B.

D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97(7), 1166–1185 (2009).
[Crossref]

Morthier, G.

Moser, P.

P. Moser, J. A. Lott, P. Wolf, G. Larisch, H. Li, N. N. Ledentsov, and D. Bimberg, “56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s,” Electron. Lett. 48(20), 1292–1294 (2012).
[Crossref]

Murayama, T.

K. Ohira, T. Murayama, S. Tamura, and S. Arai, “Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1162–1168 (2005).
[Crossref]

Naitoh, H.

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

Nishimoto, Y.

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

Nishiyama, N.

D. Inoue, J. Lee, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate,” Opt. Express 23(6), 7771–7778 (2015).
[Crossref] [PubMed]

D. Inoue, T. Hiratani, Y. Atsuji, T. Tomiyasu, T. Amemiya, N. Nishiyama, and S. Arai, “Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1502907 (2015).
[Crossref]

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

T. Okumura, M. Kurokawa, M. Shirao, D. Kondo, H. Ito, N. Nishiyama, T. Maruyama, and S. Arai, “Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits,” Opt. Express 17(15), 12564–12570 (2009).
[Crossref] [PubMed]

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

Noguchi, Y.

K. Oe, Y. Noguchi, and C. Caneau, “GaInAsP lateral current injection lasers on semi-insulating substrates,” IEEE Photonics Technol. Lett. 6(4), 479–481 (1994).
[Crossref]

Notomi, M.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Nozaki, K.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Nunoya, N.

T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003).
[Crossref]

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura, and S. Arai, “Continuous wave operation of optically pumped membrane DFB laser,” Electron. Lett. 37(24), 1455–1457 (2001).
[Crossref]

Oe, K.

K. Oe, Y. Noguchi, and C. Caneau, “GaInAsP lateral current injection lasers on semi-insulating substrates,” IEEE Photonics Technol. Lett. 6(4), 479–481 (1994).
[Crossref]

Ohira, K.

K. Ohira, T. Murayama, S. Tamura, and S. Arai, “Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1162–1168 (2005).
[Crossref]

Ohtake, M.

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

Okamoto, T.

T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003).
[Crossref]

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura, and S. Arai, “Continuous wave operation of optically pumped membrane DFB laser,” Electron. Lett. 37(24), 1455–1457 (2001).
[Crossref]

Okumura, T.

Olivier, N.

Onodera, Y.

T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003).
[Crossref]

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura, and S. Arai, “Continuous wave operation of optically pumped membrane DFB laser,” Electron. Lett. 37(24), 1455–1457 (2001).
[Crossref]

Raineri, F.

Ramos, F.

Regreny, P.

Roelkens, G.

Rojo Romeo, P.

Rojo-Romeo, P.

Sakamoto, S.

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

Sales, S.

Sanjoh, H.

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

Sarmiento, T.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Sato, T.

S. Matsuo, T. Fujii, K. Hasebe, K. Takeda, T. Sato, and T. Kakitsuka, “Directly modulated DFB laser on SiO2/Si substrate for datacenter networks,” Lightwave Technol. 33(6), 1217–1222 (2015).
[Crossref]

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Seassal, C.

Shambat, G.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Shen, P. K.

Shibata, Y.

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

Shimizu, H.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Shinya, A.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Shirao, M.

Smit, M. K.

Soref, R. A.

Spuesens, T.

Suzuki, T.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Tadokoro, T.

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

Takagi, T.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Takahata, K.

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

Takaki, K.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Takeda, K.

S. Matsuo, T. Fujii, K. Hasebe, K. Takeda, T. Sato, and T. Kakitsuka, “Directly modulated DFB laser on SiO2/Si substrate for datacenter networks,” Lightwave Technol. 33(6), 1217–1222 (2015).
[Crossref]

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Tamura, S.

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

K. Ohira, T. Murayama, S. Tamura, and S. Arai, “Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1162–1168 (2005).
[Crossref]

T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003).
[Crossref]

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura, and S. Arai, “Continuous wave operation of optically pumped membrane DFB laser,” Electron. Lett. 37(24), 1455–1457 (2001).
[Crossref]

Taniyama, H.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Tomiyasu, T.

D. Inoue, T. Hiratani, Y. Atsuji, T. Tomiyasu, T. Amemiya, N. Nishiyama, and S. Arai, “Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1502907 (2015).
[Crossref]

Tsukiji, N.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Tucker, R. S.

R. S. Tucker, J. M. Wiesenfeld, P. M. Downey, and J. E. Bowers, “Propagation delays and transition times in pulse-modulated semiconductor lasers,” Appl. Phys. Lett. 48(25), 1707–1709 (1986).
[Crossref]

Van Campenhout, J.

Van Thourhout, D.

Verstuyft, S.

Vuckovic, J.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Wiesenfeld, J. M.

R. S. Tucker, J. M. Wiesenfeld, P. M. Downey, and J. E. Bowers, “Propagation delays and transition times in pulse-modulated semiconductor lasers,” Appl. Phys. Lett. 48(25), 1707–1709 (1986).
[Crossref]

Wolf, P.

P. Moser, J. A. Lott, P. Wolf, G. Larisch, H. Li, N. N. Ledentsov, and D. Bimberg, “56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s,” Electron. Lett. 48(20), 1292–1294 (2012).
[Crossref]

Wu, M. L.

Yamanaka, T.

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

Yamazaki, T.

T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003).
[Crossref]

Yoshida, J.

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

Appl. Phys. Express (1)

D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate,” Appl. Phys. Express 7(7), 072701 (2014).
[Crossref]

Appl. Phys. Lett. (1)

R. S. Tucker, J. M. Wiesenfeld, P. M. Downey, and J. E. Bowers, “Propagation delays and transition times in pulse-modulated semiconductor lasers,” Appl. Phys. Lett. 48(25), 1707–1709 (1986).
[Crossref]

Electron. Lett. (2)

P. Moser, J. A. Lott, P. Wolf, G. Larisch, H. Li, N. N. Ledentsov, and D. Bimberg, “56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s,” Electron. Lett. 48(20), 1292–1294 (2012).
[Crossref]

T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura, and S. Arai, “Continuous wave operation of optically pumped membrane DFB laser,” Electron. Lett. 37(24), 1455–1457 (2001).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (7)

T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003).
[Crossref]

S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007).
[Crossref]

D. Inoue, T. Hiratani, Y. Atsuji, T. Tomiyasu, T. Amemiya, N. Nishiyama, and S. Arai, “Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1502907 (2015).
[Crossref]

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

K. Ohira, T. Murayama, S. Tamura, and S. Arai, “Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1162–1168 (2005).
[Crossref]

S. Imai, K. Takaki, S. Kamiya, H. Shimizu, J. Yoshida, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, T. Suzuki, N. Iwai, T. Ishikawa, N. Tsukiji, and A. Kasukawa, “Recorded low power dissipation in highly reliable 1060-nm VCSELs for “Green” optical interconnection,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1614–1620 (2011).
[Crossref]

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, and H. Sanjoh, “50-Gb/s direct modulation of 1.3-µm InGaAlAs-based DFB laser with ridge waveguide structure,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1500908 (2013).
[Crossref]

IEEE Photonics Technol. Lett. (1)

K. Oe, Y. Noguchi, and C. Caneau, “GaInAsP lateral current injection lasers on semi-insulating substrates,” IEEE Photonics Technol. Lett. 6(4), 479–481 (1994).
[Crossref]

IEICE Electron. Express (1)

S. Kanazawa, T. Ito, T. Sato, R. Iga, W. Kobayashi, K. Takahata, H. Sanjoh, and H. Ishii, “Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure,” IEICE Electron. Express 12(1), 20141028 (2015).
[Crossref]

Lightwave Technol. (1)

S. Matsuo, T. Fujii, K. Hasebe, K. Takeda, T. Sato, and T. Kakitsuka, “Directly modulated DFB laser on SiO2/Si substrate for datacenter networks,” Lightwave Technol. 33(6), 1217–1222 (2015).
[Crossref]

Nat. Photonics (2)

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics 7(7), 569–575 (2013).
[Crossref]

Opt. Express (4)

Opt. Lett. (4)

Proc. IEEE (1)

D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97(7), 1166–1185 (2009).
[Crossref]

Other (2)

A. Benner, “Optical interconnect opportunities in supercomputers and high end computing,” in Optical Fiber Communication Conference (OFC), 2012 OSA Technical Digest Series (Optical Society of America, 2012), paper OTu2B.
[Crossref]

T. Hiratani, D. Inoue, T. Tomiyasu, Y. Atsudi, K. Fukuda, T. Amemiya, N. Nishiyama, and S. Arai, “Semiconductor membrane distributed-reflector (DR) laser,” in Proceedings of the International Conference on Indium Phosphide and Related Materials (IPRM’2015), Santa Barbara, CA (2015), paper We1O6.1.

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Figures (6)

Fig. 1
Fig. 1 Schematic structure of a membrane DFB laser: (a) top view; (b) cross section.
Fig. 2
Fig. 2 Lasing characteristics of membrane DFB laser. (a) Light output versus injection current characteristics. (b) Lasing spectrum with different bias current conditions.
Fig. 3
Fig. 3 Results of RIN spectrum measurements (a) RIN spectra for various bias current conditions. (b) Plots of relaxation oscillation frequency versus square root of bias current.
Fig. 4
Fig. 4 Small-signal frequency response of membrane DFB laser.
Fig. 5
Fig. 5 Plots of damping factor versus squared relaxation oscillation frequency.
Fig. 6
Fig. 6 Relaxation oscillation frequency and −3 dB bandwidth frequency as a function of square root of the bias current obtained from small signal frequency response.

Equations (2)

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γ=K f r 2 + γ 0
MAX f 3dB = 2 2 π K

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