Abstract

We report a study of the feasibility of dielectric function measurements on ion-implanted metallic systems as a possible means to characterize such systems. Ellipsometric measurements were performed from 1.8 to 5.5 eV on Au films implanted with Cl, Ar, K, and Li impurities. The results demonstrate that measurable changes in (ω) do occur and indicate that effects arising from both radiation damage and the chemical nature of the impurity are present.

© 1977 Optical Society of America

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