Abstract

Cyclotron resonance (CR) experiments with submillimeter lasers have recently been extended to the megagauss (100 T) range. After a brief discussion of the possible origin of structure in CR data, the use of far-infrared spectroscopy in the investigation of the properties of semiconductor surfaces is reviewed. Both cyclotron resonance and inter-subband transitions have been studied. Finally, the strip-line technique which allows the observation of CR in semiconductors with high carrier concentration is discussed.

© 1977 Optical Society of America

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