The high-resolution absorption spectrum of Ge i is reported between 1500 and 1900 Å. Transitions have been observed from the 4p2 3P and 1D terms to levels with
associated with 4pns, 4pnd, and 4png configurations. Levels with n values as high as 70 have been determined. Numerous perturbations among Rydberg levels have been analyzed by the Lu-Fano graphical method. A total of 989 spectral lines and 549 energy levels are reported, most of which are new. Ionization energies of 63713.24 ± 0.10 cm−1 and 65480.60 ± 0.10 cm−1 have been determined for the
and
limits, respectively. Eigen quantum defects, transformation matrix elements, and approximate dipole parameters from multichannel quantum defect theory are presented.
C. M. Brown and M. L. Ginter J. Opt. Soc. Am. 68(2) 243-246 (1978)
References
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Relative intensities are based on visual estimates from photographic emulsions and are intended only as a qualitative guide to the reader.
The breakdown of conventional notations is serious enough in the case of Ge i to force their abandonment (see text). The lower level (from 4p2), the J′ value of the upper level, and the effective quantum number of the upper level (based on the
ionization limit) appear in the last three columns.
Very diffuse line.
Diffuse, unsymmetrical line.
Unsymmetrical.
Shoulder measurement.
Blended line. The first entry in the table is the main contributor to the line.
The third and fourth columns contain the effective quantum numbers based on the
and the
ionization limits, respectively. The next four columns summarize the observed combinations of the reported levels with the levels of the 4p2 1D and 3P terms. A number in any of these columns gives the estimated intensity of the spectral line from Table I. An ellipsis in any of the four columns indicates an allowed transition not observed in the present work. The level numbers in column nine are from Ref. 12. Several energy levels assigned to electronic configurations other than 4pns or 4pnd have been designated in the remarks columns. In keeping with our multichannel quantum defect treatment, the effective quantum numbers provide the most useful level labels. Using the fractional part of
from this table, along with Figs. 7, 10, 13, and 14, one can estimate the fraction,
, of each close-coupled channel in the given energy level.
Indicates transitions outside our wavelength region observed in emission (see Refs. 12, 13, and 14). If no transitions were measured in this work, energy levels from Refs. 12 and 13 have been included in col. 1 for completeness.
Very diffuse line.
Diffuse, unsymmetric line.
Unsymmetrical.
Shoulder measurement.
Blended line (see footnote g to Table I).
TABLE III
Transformation matrices U1α and eigen-quantum defects for Ge i.a
The matrix elements, Uiα, appear in the square brackets. The LS labels on the columns and the jj labels on the rows indicate the starting point of the iterative fitting procedure (see text). Since the Uiα’s were adjusted considerably, these labels do not necessarily reflect the properties of the α and i states. Included on the right are the range of values considered, the actual number of energy levels used, and the standard deviation of of the resultant fit. Our values of Mα correspond to (1 −Mα) of Refs. 4 and 29.
The
levels were assumed to have negligible interaction with the nd J = 2 levels.
Relative intensities are based on visual estimates from photographic emulsions and are intended only as a qualitative guide to the reader.
The breakdown of conventional notations is serious enough in the case of Ge i to force their abandonment (see text). The lower level (from 4p2), the J′ value of the upper level, and the effective quantum number of the upper level (based on the
ionization limit) appear in the last three columns.
Very diffuse line.
Diffuse, unsymmetrical line.
Unsymmetrical.
Shoulder measurement.
Blended line. The first entry in the table is the main contributor to the line.
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