Abstract

We report design, fabrication, and characterization of high-voltage LEDs (HVLEDs) using photoresist-filled-trench technique. Narrow trenches (1 $\mu$ m wide) were etched to isolate the constituent LED cells of a HVLED chip and then passivated by refilling thermal curable photoresist. With a planarized HVLED surface, only a thin metal layer was needed for inter-cell connection. The narrow trench design ensured uniform light emission and allowed for negligible connection resistance. The optical power of a HVLED with 33 cells reached 1.76 W at 100 mA. The results suggested that HVLED is a viable design option for high-voltage and low current drive applications, with large and uniform light emission areas.

© 2015 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription