Abstract

This paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ${{ZrO}}_{2}$ and IGZO/ ${{TiO}} _{x}$ channel stack. According to our experimental results, the IGZO TFT with a thin ${{TiO}} _{x}$ channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 ${{cm}}^{2} /{{V}}{\cdot}{{s}}$ under a low drive voltage of $< {{2}}~{{V}}$ . We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after ${{TiO}} _{x}$ capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/ ${{TiO}} _{x}$ TFT, indicating a weak Fermi-level pinning in IGZO/ ${{TiO}} _{x}$ channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.

© 2014 IEEE

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