Abstract

InGaN light-emitting diodes (LEDs) with the alternating quantum barriers (AQB) of AlGaN and InGaN is proposed for LED applications. With this design, simulation results show that the carrier concentration and transport in the multi-quantum well (MQW) active region are improved and accordingly, the radiative recombination rate is enhanced and the electron leakage is suppressed, due to the appropriate band engineering. Thus, the proposed structure shows an efficient improvement in the internal quantum efficiency (IQE) and efficiency droop, compared to the original structures with GaN barriers, or AlGaN barriers, or InGaN barriers. Our studies suggest that relatively simple engineering of the MQW region may still have notable positive effects on LED performance.

© 2015 IEEE

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