In this paper, we study the characteristics of blue InGaN light-emitting diodes (LEDs) with n-AlGaN electron blocking layer (EBL) and n-AlGaN space layer (SL). The output power, internal quantum efficiency (IQE), energy band diagrams, carrier concentrations, radiative recombination and spontaneous emission rate are investigated by advanced physical model of semiconductor device (APSYS). The simulation results indicate that the LED with n-AlGaN SL shows an improvement of output power and radiative recombination than that of the LED with n-AlGaN EBL. The efficiency droop has been alleviated due to the better carrier injection and the enhancement of the overlap for the electrons and holes wave-function.
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