Abstract

The preparation and electrical characterization of bottom-gate Li-doped MgZnO thin film transistors were studied in this paper. These Li-doped MgZnO thin films were deposited on \${\rm SiO}_{2}/{\rm Si}\$ substrates employing radio frequency magnetron sputtering at room temperature. This electrical characterization showed the mobility of \${{9.4}}~{{cm}}^{2}/{{V}}\cdot{{s}}\$ , a \${V}_{\rm TH}\$ of \$-{{7}}~{{V}}\$ and a large on/off current ratio of \${{1.4}} \times {{10}}^{7}\$ for Li-doped MgZnO TFT.

© 2015 IEEE

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