Abstract

This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of ${{HfO}}_{2}$ and ${{Y}}_{2}{{O}}_{3}$ exhibited favorable adhesion properties on a flexible substrate compared with conventional low- $\kappa$ ${{SiO}}_{2}$ film. Based on the experimental results, the room-temperature ${{ IGZO/HfO}}_{2}$ TFTs demonstrated effective device integrity, and achieve a low drive voltage of $< {{2}}$ V, a low threshold voltage of ${{0.46}} \pm {{006}}$ V, a low sub-threshold swing of ${{110}} \pm {{6}}$ mV/decade and an extremely high mobility of ${{60.2}} \pm {{32}}$ cm $^{2}/{{V}}\cdot{{s}}$ . The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

© 2014 IEEE

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