The CeO<sub>2</sub>/La<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub>/Ni piled-up structure is a very promising architecture for YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> (YBCO) coated conductors. We have grown YBCO/CeO<sub>2</sub>/LZO/Ni epitaxial structures by metalorganic decomposition (MOD) and metalorganic chemical vapor deposition (MOCVD) methods. The crystallographic quality of the CeO<sub>2</sub> layer is not well determined by conventional X-ray diffraction (XRD) due to the superposition of LZO and CeO<sub>2</sub> reflections. An alternative simple Raman spectroscopy analysis of the crystalline quality of the CeO<sub>2</sub> films is proposed. The F<sub>2g</sub> Raman mode of CeO<sub>2</sub> can be quantified either by using two polarization configurations (crossed or parallel) or at two different rotation angles around the normal axis (0° and 45°) to obtain information about the sample texture. The sample texture can be determined via a quality factor (referred to as the Raman intensity ratio, RIR) consisting of calculating the ratio of the integrated intensity of the CeO<sub>2</sub> F<sub>2g</sub> mode at 0° and 45° in parallel polarization. This factor correlates with superconducting performance and the technique can be used as an on-line nondestructive characterization method.
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