Abstract

The CeO<sub>2</sub>/La<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub>/Ni piled-up structure is a very promising architecture for YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> (YBCO) coated conductors. We have grown YBCO/CeO<sub>2</sub>/LZO/Ni epitaxial structures by metalorganic decomposition (MOD) and metalorganic chemical vapor deposition (MOCVD) methods. The crystallographic quality of the CeO<sub>2</sub> layer is not well determined by conventional X-ray diffraction (XRD) due to the superposition of LZO and CeO<sub>2</sub> reflections. An alternative simple Raman spectroscopy analysis of the crystalline quality of the CeO<sub>2</sub> films is proposed. The F<sub>2g</sub> Raman mode of CeO<sub>2</sub> can be quantified either by using two polarization configurations (crossed or parallel) or at two different rotation angles around the normal axis (0° and 45°) to obtain information about the sample texture. The sample texture can be determined via a quality factor (referred to as the Raman intensity ratio, RIR) consisting of calculating the ratio of the integrated intensity of the CeO<sub>2</sub> F<sub>2g</sub> mode at 0° and 45° in parallel polarization. This factor correlates with superconducting performance and the technique can be used as an on-line nondestructive characterization method.

PDF Article

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription