Abstract

Thin films of garnet grown by liquid phase epitaxy have been studied by means of the electronic Raman effect. It is shown that films of moderate thickness (about 10 to 20 μm) can be measured directly, without using difficult lightguiding techniques. The method has been applied successfully to the study of electronic Raman transitions of the Tb<sup>3+</sup> ion in yttrium aluminium garnet. In this way two transitions were measured in the ground state <sup>7</sup>F<sub>6</sub> and seven transitions between the ground state <sup>7</sup>F<sub>6</sub> and the first excited state <sup>7</sup>F<sub>5</sub>. From these results, it is concluded that in crystalline films of yttrium aluminium garnet, terbium substitutes for yttrium in the same way as it does in single crystals.

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