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Optoelectronic Optimization of Graded-Bandgap Thin-Film AlGaAs Solar Cells

Applied Optics
  • Faiz Ahmad, Akhlesh Lakhtakia, and Peter Monk
  • received 10/22/2019; accepted 12/06/2019; posted 12/06/2019; Doc. ID 381246
  • Abstract: An optoelectronic optimization was carried out for an AlGaAs solar cell containing an n-AlGaAs absorber layer with a graded bandgap, a periodically corrugated Ag backreflector combined withlocalized ohmic Pd-Ge-Au backcontacts. The bandgap of the absorber layer was varied either sinusoidallyor linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearlygraded bandgap along with silver backreflector and localized ohmic backcontacts, in comparisonto 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidalgrading of the bandgap enhances the maximum efficiency to 34.5%. Thus, grading the bandgap ofthe absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Aubackcontacts can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.© 2019 Optical Society of America
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