Abstract

We demonstrate a method based on carrier frequency interferometry (CFI) that measures surface deformation with high accuracy. The method is applied to assess the deformation of thin-film dielectrics deposited on thick substrates. CFI measured the wavefront radius of curvature R with an accuracy of 0.2% for an R smaller than 500 m and 2% for an R between 500 and 2000 m (flat reference substrate). We show the method has a significantly larger dynamic range and sensitivity than Twyman–Green and comparable sensitivity to white light interferometry.

© 2016 Optical Society of America

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