Abstract

A model describing spectral supralinearity for a silicon photodiode in the near-infrared region is presented. This theoretical model is based on the internal quantum efficiency model of the photodiode using Shockley–Read–Hall recombination, which depends on the inner structure parameters of the photodiodes. Comparing the experimental results with the theoretical calculation results, the model enables us to quantitatively predict the starting power level, shape, and wavelength dependence of the supralinearity for a silicon photodiode. This model contributes to high-accuracy measurements over wide optical power ranges and various incident wavelengths.

© 2015 Optical Society of America

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