Abstract

This paper outlines the development of an ellipsometer operating at far ir wavelength (118.6 μm). The system has been used to measure thickness of n-type silicon epitaxial layers grown on heavily doped n-type silicon substrate. It is shown that the technique provides accurate measurements for both thick (>3-μm) and thin (<3-μm) epitaxial layers, and when used in conjunction with near ir interference measurements, a measure of junction grading is obtained.

© 1972 Optical Society of America

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