Abstract

Gallium indium phosphide (${\mathrm{Ga}}_{0.51}{\mathrm{In}}_{0.49}\mathrm{P}$), lattice matched to gallium arsenide, shows remarkable second-order nonlinear properties, as well as strong photoluminescence (PL) due to its direct band gap. By measuring the second-harmonic generation from the GaInP microwaveguide ($0.2\times 11\times 1300\mathrm{\mu m}$) before and after stimulating intrinsic photobleaching, we demonstrate that the PL could be strongly suppressed ($-34\mathrm{dB}$), leaving the nonlinear properties unchanged, making it suitable for low-noise applications.

© 2019 Optical Society of America

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