Abstract

Strained quantum wells composed of In_xGa_1−xAs are currently of considerable interest for application in optoelectronic and optical devices. The strain-induced splitting of the light and heavy-hole valence bands and reduction in the effective mass of the upper valence band result in a number of desirable features, such as reduction in laser thresholds and enhanced hole mobilities. It is possible that the replacement of the disordered ternary alloy In_xGa_1−xAs with a strained superlattice composed of the ordered binary materials InAs and GaAs may result in a further enhancement of material parameters. The large strain in these structures may provide further reduction of the hole mass and corresponding increase in the mobility relative to In_xGa_1−xAs. In addition, it has been found that by replacing the In_xGa_1−xAs with a strained all-binary superlattice, it is possible to increase the average mole fraction of indium in a quantum well without causing relaxation.¹ This may result in a further increase in carrier mobilities.

© 1991 Optical Society of America