Abstract
There has been considerable research done in characterizing the picosecond carrier dynamics of GaAs, however, only a few time-dependent optical measurements have been reported in InGaP1,2 We report here the investigations of carrier dynamics, in the picosecond time scales, of a 0. 4-μm InGaP film grown by molecular beam epitaxy using the pump and probe laser absorption technique with 150-fs laser pulses from a synchronously pumped dye laser operating around 600 nm.
© 1991 Optical Society of America
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