Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper QThD5

Origin of nonlinear gain saturation in 1550-nm InGaAsP laser diodes

Not Accessible

Your library or personal account may give you access

Abstract

Nonlinear gain saturation has a strong effect on the dynamics of InGaAsP laser diodes. The physical origin of nonlinear gain has been attributed mainly to spectral hole burning1 and carrier heating.2

© 1991 Optical Society of America

PDF Article
More Like This
Influence of carrier heating on gain dynamics in semiconductor lasers

M. Willatzen, J. Mørk, H. Olesen, J. Mark, and A. Uskov
QThD4 Quantum Electronics and Laser Science Conference (CLEO:FS) 1991

Observation of positive and negative nonlinear gain in semiconductor diode lasers using optical modulation

J. EOM and C. B. SU
WG5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Femtosecond Spectral Hole Burning in InGaAs/AlGaAs Strained-Layer Single-Quantum-Well Diode Lasers

C.-K. Sun, B. Golubovic, H. K. Choi, C. A. Wang, G. D. Sanders, C. J. Stanton, and J. G. Fujimoto
ThD.2 International Conference on Ultrafast Phenomena (UP) 1994

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved