Abstract

Optical second-harmonic generation (SHG) is a promising technique for the study of buried interfaces.^1,2 During growth in ultrahigh vacuum (UHV), we have measured the intensity of second-harmonic radiation generated by NiSi₂ on Si(111) as a function of sample azimuthal orientation and silicide overlayer thickness. P-polarized 700-nm light from a YAG-pumped dye laser was incident at 60° off normal, and p-polarized second-harmonic radiation was detected. Figure 1 shows the second-harmonic intensity observed from clean Si(111) 7×7 and from a 33-Å layer of epitaxial type B silicide on Si(111) ("A" and "B" refer to overlayer orientation; see Ref. 3). The intensity maxima are reduced and reversed in direction by the addition of the silicide overlayer.

© 1991 Optical Society of America