Abstract

The kinetics of gas-surface interactions is of major importance in subjects ranging from catalysis and corrosion to semiconductor materials processing. The study of such interactions under ultra-high-vacuum (UHV) conditions can provide insight into the fundamental processes that occur during the critical low-coverage phase. Electron-and ion-beam techniques are usually inapplicable in the presence of an ambient gas for all but the lowest pressures. In addition, such techniques usually have poor time-resolution capabilities.

© 1991 Optical Society of America