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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper MEE2

Femtosecond subbandgap excitations in semiconductor quantum wells

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Abstract

AC-Stark effects have been studied experimentally and theoretically for some time. In the case of semiconductors, the ac-Stark shift has been studied more recently.1,2 We discuss new experiments in which the low-intensity and high-intensity limits of the ac-Stark shift in GaAs quantum wells are investigated. In addition, we study the effects of application of a dc-bias field perpendicular to the layers, so that the dc quantum-confined Stark effect interacts with the ac-Stark shift.

© 1989 Optical Society of America

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