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Thermal Impedance and Gain Switching of 1550 nm Room Temperature Continuous-wave Electrically Pumped Laser Diode Monolithically Grown on Silicon

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Abstract

A room-temperature continuous-wave electrically pumped quantum well laser was realized on on-axis (001) silicon. Measurements demonstrated lasing up to 65°C, a thermal impedance of 8.1°C/W, and a narrow gain-switched optical pulse width of 1.5 ns.

© 2020 The Author(s)

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