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Electrical and Optical Reliability Analysis of GeSi Electro-Absorption Modulators

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Abstract

Reliability analysis on Electro-Absorption Modulators reveals two degradation parts, trap generation and filling of pre-existing defects on Ge/Si and Ge/Ox interface. After stress, electro-optical extracted parameters indicate no impact of temperature, bias or stress time.

© 2020 The Author(s)

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