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Conferences > OFC > 2019 > Th3B > Th3B.2

35Gb/s Ultralow-Voltage Three-Terminal Si-Ge Avalanche Photodiode

Binhao Wang, Zhihong Huang, Xiaoge Zeng, Di Liang, Marco Fiorentino, and Raymond G. Beausoleil

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Abstract

We demonstrate a 35Gb/s three-terminal waveguide silicon-germanium avalanche photodiode using a lateral interdigitated multiplication region. A breakdown voltage of −6V, a bandwidth of 18.9GHz, and a multiplication gain of 15 are achieved.

© 2019 The Author(s)

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