Abstract

Pseudomorphic GeSn/Ge multiple-quantum-well p-i-n photodiodes were studied at 2 µm range. Direct current and radio frequency measurements were performed to investigate the electrical and optical property of GeSn/Ge MQWs for photo detection and electro-absorption modulation.

© 2019 The Author(s)

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription