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Optimum design of In0.53Ga0.47As and InP Junction field-effect transistors for optoelectronic Integrated circuits

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Abstract

Monolithic integration of photonic devices, such as lasers, modulators, and photodetectors, along with their associated electronic circuitry, are attractive for second-generation photonic systems including optical interconnects, optical computing, signal processing, and communications.1

© 1989 Optical Society of America

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