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Conferences > OFC > 1989 > WF > WF3

Optoelectronic integrated receivers on InP substrates by organometallic vapor phase epitaxy

GORO SASAKI, KEN-ICHI KOIKE, NOBUHIRO KUWATA, and KIMIZO ONO

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Abstract

Optoelectronic integrated receivers for long-wavelength fiber-optic communications have been fabricated by molecular beam epitaxy regrowth of field-effect transistors after vapor phase epitaxy of PIN photcdicdes.1,2 We have successfully integrated a PIN photodiode and a high electron mobility transistor (HEMT) amplifier onto InP substrates monolithically by organometallic vapor phase epitaxy (OMVPE) using a stacked epitaxial layer structure.

© 1989 Optical Society of America

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