Abstract

While much progress has been made in light source and detector technology in the InGaAs/InP and InGaAsP/InP material system, the fabrication of an InP-based electronic circuit technology still remains in the research stage. MESFET technology cannot be implemented as a result of the low Schottky barrier height on InGaAs, while the preparation of high-quality MISFETs on InP has turned out to be difficult1 due to the undesirable characteristics of the metal-insulator-semiconductor interfaces.

© 1987 Optical Society of America

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