Abstract
While much progress has been made in light source and detector technology in the InGaAs/InP and InGaAsP/InP material system, the fabrication of an InP-based electronic circuit technology still remains in the research stage. MESFET technology cannot be implemented as a result of the low Schottky barrier height on InGaAs, while the preparation of high-quality MISFETs on InP has turned out to be difficult1 due to the undesirable characteristics of the metal-insulator-semiconductor interfaces.
© 1987 Optical Society of America
PDF ArticleMore Like This
A. Antreasyan, P. A. Garbinski, V. D. Mattera, and H. Temkin
WB2 Picosecond Electronics and Optoelectronics (UEO) 1987
J. Cheng, S. R. Forrest, C. L. Cheng, R. Stall, G. Guth, and P. H. Schmidt
WC6 Optical Fiber Communication Conference (OFC) 1985
J. M. Wiesenfeld, R. S. Tucker, A. Antreasyan, C. A. Burrus, and A. J. Taylor
WA4 Picosecond Electronics and Optoelectronics (UEO) 1987