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Monolithic Integration of InGaAsP/lnP distributed-feedback laser and electroabsorption modulator by vapor-phase epitaxy

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Abstract

Monolithic integration of distributed feedback (DFB) or distributed Bragg reflector (DBR) lasers and high-speed external modulators is a promising approach toward tight sources in a multigigabit optical fiber transmission system. Recently, we reported vapor-phase-epitaxy (VPE) grown InGaAsP/lnP electroabsorption (EA) light modulators operating at the 1.55-μm wavelength and demonstrated low driving power, high-modulation speed up to 3.8 GHz, and narrow dynamic spectral width.1,2 We report an integrated DFB laser/EA modulator device.

© 1987 Optical Society of America

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