Abstract

Large gain-bandwidth product and low-noise avalanche photodiodes (APDs) in the long-wavelength region are required in long-haul gigabit-rate lightwave systems. We have reported a practical device structure for planar GaInAs APDs with a successful guard ring effect in buried structure APDs.1 To obtain a large gain-bandwidth product, a higher carrier concentration n-InP multiplication layer must be employed to reduce avalanche buildup time. However, this results in deterioration of the excess noise factor for GaInAs APDs. We describe a design condition for achieving a large gain-bandwidth product and low-noise performance at the same time for GaInAs buried structure APDs grown by liquid phase epitaxy (LPE).

© 1987 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription