Abstract

Avalanche photodiodes with separate InGaAs absorption and InP multiplication region (SAM-APDs) are today considered the most interesting detectors for long-haul high-bit-rate communication systems because of their high sensitivity and speed. Nevertheless, these devices up to now have been made on small size LPE or chloride VPE materials, which results in high cost. Therefore, there is renewed interest in new vapor phase epitaxy techniques with improved capabilities. Recently, PIN photodiodes¹ and the first unpassivated mesa SAM-APDs² made by MOVPE were reported.

© 1987 Optical Society of America