Abstract

High-power 1.3-µm InGaAsP/InP laser diodes are desirable in various fields such as long-haul optical communication systems, optical time domain reflectometers, and satellite communication systems. We have achieved stable high-power operation as high as 50 mW of 1.3-µm InGaAsP/InP p-substrate buried crescent laser diodes (PBC-LDs)1 by controlling the Iront- and rear-tacet reflectivities of laser chips.

© 1987 Optical Society of America

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