Abstract

Optoelectronic devices based on InGaAs/InP and InGaAsP/InP are the building blocks of long-wavelength optical communication systems. While much progress has been made in source and detector technology, the search for a suitable electronic technology remains an open subject in the quest for optoelectronic integration. The development of a MESFET technology is hampered by the difficulty of achieving a sufficiently high Schottky barrier for the narrow band gap ternary and quaternary materials, while the present lack of an insulator with a sufficiently low density of surface states impedes the development of MISFETs.

© 1985 Optical Society of America

PDF Article