Abstract

Rapid advancement in the field of III–V component technology in the past several years has inevitably led to the recent increased emphasis on the integration of discrete photonic components. For example, there have been reports of such devices as lasers integrated with driver circuitry as well as photodetectors integrated with transistors1 for potential application in optical receivers. These and other circuits have been fabricated in both the GaAs-and InP-based material systems.

© 1985 Optical Society of America

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