It is very desirable to improve the high-temperature performance characteristics of the 1.5–1.6-μm InGaAsP/InP laser diodes (LDs), which have so far been inferior to those of the 1.3-μm LDs.1 We report improvement in the temperature dependence of 1.52-μm InGaAsP/lnP double-channel planar-buried-heterostructure (DCPBH) LDs,2 which has been achieved by using two-step vapor phase epitaxy (VPE) and liquid phase epitaxy (LPE) crystal growth. We discuss the reason for the temperature-dependence improvement.

© 1985 Optical Society of America

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