Abstract

We report the fabrication and performance characteristics of InGaAsP double-channel planar buried heterostructure (DCPBH) lasers with multi-quantum well (MQW) active layers emitting near 13 μm. The lasers have a threshold current of ~30 mA at 30°C and external differential quantum efficiencies of ~50% at 30°C. The lasers operate in a single transverse mode up to high powers (>10 mW/facet) and can be modulated at high bit rates (~2 Gbit/sec).

© 1985 Optical Society of America

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