Abstract

A high output power of 85 mW in cw conditions and 460 mW in pulse conditions has been obtained in a 1.3-μm InGaAsP p-substrate buried crescent (PBC) laser diode in spite of junction-up mounting. The lasers have been operating stably for 350 h in a preliminary aging test at 70°C with a 20-mW constant light output.

© 1985 Optical Society of America

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