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Conferences > OFC > 1984 > WA > WA4

New 1.3-1.6-μm low-voltage low-dark- current p+in+in− avalanche detector with separated absorption and multiplication regions grown by molecular beam epitaxy

Federico Capasso and Alfred Y. Cho

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Abstract

Considerable research effort in recent years has concentrated on the development of long-wavelength InP/GaInAs avalanche photodiodes with separated multiplication and absorption regions (SAM-APD).1,2

© 1984 Optical Society of America

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