Abstract
A multilayer heterojunction phototransistor (HPT) structure has been grown by molecular beam epitaxy (MBE) with a double-base structure. The first base region close to the AlxGa1−xAs emitter layer is AlyGa1−yAs with y < x (x = 30%, Y ≃ 12%), Be-doped p ≃ 1017 cm−3. The second base region 1000 Å thick is GaAs Be-doped 1019 cm−3. The aluminum mole fraction ratio is graded between the emitter and AlyGa1−yAs base region. The interface between the two base regions is abrupt.
© 1983 Optical Society of America
PDF ArticleMore Like This
M. S. UNLU, J-I. CHYI, KATSUMI KISHINO, J. REED, S. NOOR MOHAMMAD, and H. MORKOC
CTHQ5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990
J. PASLASKI, H. Z. CHEN, H. MORKOC, and AMNON YARIV
THX2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988
J. H. Quigley, H. Y. Lee, M. D. Crook, M. J. Hafich, G. Y. Robinson, Du Li, and N. Otsuka
TuE9 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989