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High temperature reliability of vapor- grown InGaAs photodiodes

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Abstract

Undegraded operation of vapor-phase epitaxy (VPE) InGaAs/lnP PIN photodiodes has been observed for over 8000h at 60°C, 4000h at 120°C, and over 3000h at 180°C. Leakage current was monitored in groups of photodiodes as a function of time under a reverse bias of 10 V. These photodiodes1 * had 100-μm diam active areas with an unpassivated etched mesa structure. Typical room temperature properties (at—10 V) were: leakage current, <10 nA; quantum efficiency (at 1.3 μm), ~80%; pulse rise time, <0.3 nsec; and noise equivalent power, <5 X 10-13 W/Hz1/2. Fairly uniform spectral response was observed between 1.0 and 1.73 μm. These devices have been operated successfully at temperatures above 200°C. Undegraded operation has also been observed with photodiodes operated for several thousand hours in an unprotected room temperature ambient.

© 1982 Optical Society of America

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