Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

High T0 low-threshold InGaAsP buried- heterostructure lasers

Not Accessible

Your library or personal account may give you access

Abstract

Increasing interest in recent years in InGaAsP/InP lasers for fiber-optic communication has led to development of advanced structures which have a stabilized mode in the junction plane. Low-threshold and single-mode operation have been realized using the two-step LPE-grown buried heterostructure1 or the single-step mesa-substrate (MSB) and the channeled substrate buried heterostructure, both with a builtin narrow optical waveguide. In spite of good current confinement and optical guiding, no change in the low T0 value (40-75°C)2 has been reported.

© 1982 Optical Society of America

PDF Article
More Like This
High-power low-threshold InGaAsP buried-heterostructure lasers grown by a single-step LPE

M. Oron, N. Tamari, and A. A. Ballman
WJ2 Optical Fiber Communication Conference (OFC) 1983

High-power high-temperature operation laser diode with InGaAsP/InP buried heterostructure fabricated by single-step liquid-phase epitaxy

H. Nomura, M. Sugimoto, and A. Suzuki
ThBB2 Optical Fiber Communication Conference (OFC) 1982

Low-threshold buried-heterostructure 0.98-μm strained-quantum-well InGaAsP/InGaAsP/InGaP lasers

E. C. Vail, S. F. Lim, Y.-A. Wu, D. A. Francis, C. J. Chang-Hasnain, R. Bhat, C. Caneau, and H. Leblanc
WH16 Optical Fiber Communication Conference (OFC) 1993

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved