Abstract
Increasing interest in recent years in InGaAsP/InP lasers for fiber-optic communication has led to development of advanced structures which have a stabilized mode in the junction plane. Low-threshold and single-mode operation have been realized using the two-step LPE-grown buried heterostructure1 or the single-step mesa-substrate (MSB) and the channeled substrate buried heterostructure, both with a builtin narrow optical waveguide. In spite of good current confinement and optical guiding, no change in the low T0 value (40-75°C)2 has been reported.
© 1982 Optical Society of America
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